Title: | Growth and modification of planar and self-assembled semiconductor nanostructures |
Author(s): | Sormunen, Jaakko |
Date: | 2006-03-10 |
Language: | en |
Pages: | 51, [app] |
Department: | Department of Electrical and Communications Engineering Sähkö- ja tietoliikennetekniikan osasto |
ISBN: | 951-22-8038-8 |
Series: | TKK dissertations, 23 |
ISSN: | 1795-4584 |
Subject: | Electrical engineering, Physics |
Keywords: | nanotechnology, epitaxy, compound semiconductor, quantum well, quantum dot, quantum ring |
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Abstract:The epitaxial growth and modification of planar and self-assembled compound semiconductor nanostructures is studied. Quantum dot (QD), quantum ring (QR), and quantum well (QW) structures are grown by metalorganic vapor phase epitaxy. The surface morphology of the samples and nanostructure properties are studied by atomic force microscopy. Photoluminescence (PL) spectroscopy is used to characterize the optical properties of the structures.
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Parts:J. Sormunen, J. Riikonen, M. Mattila, J. Tiilikainen, M. Sopanen, and H. Lipsanen, Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping, Nano Letters 5, 1541-1543 (2005).J. Sormunen, J. Riikonen, T. Hakkarainen, M. Sopanen, and H. Lipsanen, Evolution of self-assembled InAs/InP islands into quantum rings, Japanese Journal of Applied Physics 44, L1323-L1325 (2005).J. Sormunen, J. Riikonen, M. Mattila, M. Sopanen, and H. Lipsanen, Modified self-assembly of InAs islands acting as stressors for strain-induced InGaAs(P)/InP quantum dots, Nanotechnology 16, 1630-1635 (2005).J. Riikonen, J. Sormunen, M. Mattila, M. Sopanen, and H. Lipsanen, InGaAs/InP quantum dots induced by self-organized InAs stressor-islands, Japanese Journal of Applied Physics 44, L518-L520 (2005).J. Riikonen, J. Sormunen, H. Koskenvaara, M. Mattila, M. Sopanen, and H. Lipsanen, Highly tunable emission from strain-induced InGaAsP/InP quantum dots, Japanese Journal of Applied Physics 44, L976-L978 (2005).H. Koskenvaara, J. Riikonen, J. Sormunen, M. Sopanen, and H. Lipsanen, Carrier dynamics in strain induced InGaAsP/InP quantum dots, Physica E, accepted for publication.J. Sormunen, J. Toivonen, M. Sopanen, and H. Lipsanen, Morphology of ultra-thin cubic GaN layers on GaAs(1 0 0) grown by MOVPE with DMHy as nitrogen source, Applied Surface Science 222, 286-292 (2004).J. Riikonen, J. Sormunen, H. Koskenvaara, M. Mattila, M. Sopanen, and H. Lipsanen, Passivation of GaAs surface by ultrathin epitaxial GaN layer, Journal of Crystal Growth 272, 621-626 (2004). |
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