X-ray reflectance and infrared spectroscopy study of plasma enhanced atomic layer deposited Al2O3 and SiO2

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.advisor Sippola, Perttu
dc.contributor.author Ostrovskaia, Elena
dc.date.accessioned 2017-05-11T10:28:41Z
dc.date.available 2017-05-11T10:28:41Z
dc.date.issued 2017-05-08
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/26110
dc.description.abstract In this thesis, Al2O3 and SiO2 thin films produced by plasma enhanced atomic layer deposition were studied using X-ray reflectance (XRR) and attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR). Structural characterization of thin films such as thickness, roughness and density was obtained with the XRR technique. Qualitative chemical constitution of the samples was studied with infrared spectra. The samples were deposited using different plasma powers at low temperature ALD. The characteristic difference between as-deposited vs. 400 celsius annealed Al2O3 thin films were investigated. In case of SiO2, the effect of plasma time and ALD cycle number to thin film properties were analyzed. It was found that thickness does not show any dependence on plasma power, but density is increasing with plasma power for Al2O3, while for SiO2 no apparent dependence was revealed. Analysis of roughness showed that it increases with plasma power for Al2O3 and thin SiO2 samples, while for thicker SiO2 samples it does not change significantly. Analysis of ATR-FTIR spectra showed that there was no significant thin film composition dependence on the different plasma powers. ATR-FTIR results revealed that the structure of Al2O3 includes stretching and bending modes of Al-O bonds and also have sharp valley of Si-O bond due to the presence of native oxide between the Al2O3 thin film and Si substrate. SiO2 infrared spectra comprises Si-O bending and stretching bands and also bands connected with the presence of O-H groups. Also detectable traces of CH3 impurities was found, especially in case of thicker SiO2 thin films. On the basis of the performed analysis the dependence of SiO2 and Al2O3 thin film density, roughness, thickness and molecular constitution on plasma parameters was reported. en
dc.format.extent 47+5
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.title X-ray reflectance and infrared spectroscopy study of plasma enhanced atomic layer deposited Al2O3 and SiO2 en
dc.type G2 Pro gradu, diplomityö fi
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.subject.keyword PEALD en
dc.subject.keyword Al2O3, SiO2 en
dc.subject.keyword oxide thin films en
dc.subject.keyword XRR en
dc.subject.keyword FTIR en
dc.subject.keyword O2 plasma en
dc.identifier.urn URN:NBN:fi:aalto-201705114590
dc.programme.major Micro- and Nanosciences fi
dc.programme.mcode ELEC3037 fi
dc.type.ontasot Master's thesis en
dc.type.ontasot Diplomityö fi
dc.contributor.supervisor Lipsanen, Harri
dc.programme NanoRad - Master’s Programme in Nano and Radio Sciences (TS2013) fi
dc.ethesisid Aalto 9315
dc.location P1 fi

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