Majority Carrier Mobility of Compensated Silicon

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Zhang, Song
dc.contributor.author Modanese, Chiara
dc.contributor.author Gaspar, Guilherme
dc.contributor.author Søndenå, Rune
dc.contributor.author Tranell, Gabriella
dc.contributor.author Di Sabatino, Marisa
dc.date.accessioned 2017-05-11T08:24:32Z
dc.date.available 2017-05-11T08:24:32Z
dc.date.issued 2016-08-01
dc.identifier.citation Zhang , S , Modanese , C , Gaspar , G , Søndenå , R , Tranell , G & Di Sabatino , M 2016 , Majority Carrier Mobility of Compensated Silicon : Comparison of Room Temperature Measurements and Models . in Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics : SiliconPV 2016 . ENERGY PROCEDIA , vol. 92 , Elsevier Ltd. , pp. 278-283 , International Conference on Crystalline Silicon Photovoltaics , Chambéry , France , 7-9 March . DOI: 10.1016/j.egypro.2016.07.078 en
dc.identifier.issn 1876-6102
dc.identifier.other PURE UUID: 6ccfa178-e4f1-4cd7-925b-4542e47aa4ed
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/majority-carrier-mobility-of-compensated-silicon(6ccfa178-e4f1-4cd7-925b-4542e47aa4ed).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85014477126&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/11534433/1_s2.0_S1876610216305057_main.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/25592
dc.description.abstract In this work the measured majority carrier mobility in compensated silicon is compared to values predicted by two different models: Klaassen's model for conventional silicon and the more recent unified model for compensated silicon by Schindler et al (Schindler's model). The purpose of the comparison is to broaden the range of materials included in the newly developed model for compensated materials. As observed previously, the deviation of the prediction by Klaassen's model from the experimental data increases with increasing compensation ratio, RC. It is observed that above a critical RC value (RC > 5.5) the deviation from the measured values is lower for Schindler's model. Occasionally high deviations are observed, which are believed to be related to unusually high defect density of the samples, e.g. defects related to light elements (oxygen and carbon) or metal impurities. Such impurities may contribute considerably to the ionized impurity concentration. Therefore, it is suggested that knowledge of additional parameters to the doping concentration is needed in order to increase the accuracy of Schindler's model. en
dc.format.extent 6
dc.format.extent 278-283
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Elsevier
dc.relation.ispartof International Conference on Crystalline Silicon Photovoltaics en
dc.relation.ispartofseries Proceedings of the 6th International Conference on Crystalline Silicon Photovoltaics en
dc.relation.ispartofseries ENERGY PROCEDIA en
dc.relation.ispartofseries Volume 92 en
dc.rights openAccess en
dc.subject.other Energy(all) en
dc.subject.other 114 Physical sciences en
dc.title Majority Carrier Mobility of Compensated Silicon en
dc.type A4 Artikkeli konferenssijulkaisussa fi
dc.description.version Peer reviewed en
dc.contributor.department Norwegian University of Science and Technology
dc.contributor.department Department of Micro and Nanosciences
dc.contributor.department Institute for Energy Technology
dc.subject.keyword Compensation
dc.subject.keyword Defects
dc.subject.keyword Mobility
dc.subject.keyword Models
dc.subject.keyword Energy(all)
dc.subject.keyword 114 Physical sciences
dc.identifier.urn URN:NBN:fi:aalto-201705113976
dc.identifier.doi 10.1016/j.egypro.2016.07.078
dc.type.version publishedVersion


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