Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Susoma, Jannatul
dc.contributor.author Lahtinen, Jouko
dc.contributor.author Kim, Maria
dc.contributor.author Riikonen, Juha
dc.contributor.author Lipsanen, Harri
dc.date.accessioned 2017-05-03T12:24:25Z
dc.date.available 2017-05-03T12:24:25Z
dc.date.issued 2017-01-01
dc.identifier.citation Susoma , J , Lahtinen , J , Kim , M , Riikonen , J & Lipsanen , H 2017 , ' Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint ' AIP ADVANCES , vol 7 , no. 1 , 015014 . DOI: 10.1063/1.4973918 en
dc.identifier.issn 2158-3226
dc.identifier.other PURE UUID: 46e2224a-96e6-47b2-99a8-9bf334c02f99
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/crystal-quality-of-twodimensional-gallium-telluride-and-gallium-selenide-using-raman-fingerprint(46e2224a-96e6-47b2-99a8-9bf334c02f99).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85009179395&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/11520171/1.4973918.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/25391
dc.description.abstract We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions. en
dc.format.extent 8
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries AIP ADVANCES en
dc.relation.ispartofseries Volume 7, issue 1 en
dc.rights openAccess en
dc.subject.other Physics and Astronomy(all) en
dc.subject.other 114 Physical sciences en
dc.title Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Micro and Nanosciences
dc.contributor.department Department of Applied Physics
dc.subject.keyword Physics and Astronomy(all)
dc.subject.keyword 114 Physical sciences
dc.identifier.urn URN:NBN:fi:aalto-201705033792
dc.identifier.doi 10.1063/1.4973918
dc.type.version publishedVersion


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