Direct observation of oxygen vacancy-driven structural and resistive phase transitions in La2/3Sr1/3MnO3

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Yao, Lide
dc.contributor.author Inkinen, Sampo
dc.contributor.author Van Dijken, Sebastiaan
dc.date.accessioned 2017-03-23T11:15:02Z
dc.date.available 2017-03-23T11:15:02Z
dc.date.issued 2017-02-23
dc.identifier.citation Yao , L , Inkinen , S & Van Dijken , S 2017 , ' Direct observation of oxygen vacancy-driven structural and resistive phase transitions in La 2/3 Sr 1/3 MnO 3 ' NATURE COMMUNICATIONS , vol 8 , 14544 , pp. 1-9 . DOI: 10.1038/ncomms14544 en
dc.identifier.issn 2041-1723
dc.identifier.other PURE UUID: 54e25b51-6b97-4325-aa07-b5c0afcb82f2
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/direct-observation-of-oxygen-vacancydriven-structural-and-resistive-phase-transitions-in-la23sr13mno3(54e25b51-6b97-4325-aa07-b5c0afcb82f2).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=85013819521&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/11230411/ncomms14544.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/24888
dc.description.abstract Resistive switching in transition metal oxides involves intricate physical and chemical behaviours with potential for non-volatile memory and memristive devices. Although oxygen vacancy migration is known to play a crucial role in resistive switching of oxides, an in-depth understanding of oxygen vacancy-driven effects requires direct imaging of atomic-scale dynamic processes and their real-time impact on resistance changes. Here we use in situ transmission electron microscopy to demonstrate reversible switching between three resistance states in epitaxial La2/3Sr1/3MnO3 films. Simultaneous high-resolution imaging and resistance probing indicate that the switching events are caused by the formation of uniform structural phases. Reversible horizontal migration of oxygen vacancies within the manganite film, driven by combined effects of Joule heating and bias voltage, predominantly triggers the structural and resistive transitions. Our findings open prospects for ionotronic devices based on dynamic control of physical properties in complex oxide nanostructures. en
dc.format.extent 1-9
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation info:eu-repo/grantAgreement/EC/FP7/307502/EU//E-CONTROL
dc.relation.ispartofseries NATURE COMMUNICATIONS en
dc.relation.ispartofseries Volume 8 en
dc.rights openAccess en
dc.subject.other Chemistry(all) en
dc.subject.other Biochemistry, Genetics and Molecular Biology(all) en
dc.subject.other Physics and Astronomy(all) en
dc.subject.other 114 Physical sciences en
dc.title Direct observation of oxygen vacancy-driven structural and resistive phase transitions in La2/3Sr1/3MnO3 en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword Chemistry(all)
dc.subject.keyword Biochemistry, Genetics and Molecular Biology(all)
dc.subject.keyword Physics and Astronomy(all)
dc.subject.keyword 114 Physical sciences
dc.identifier.urn URN:NBN:fi:aalto-201703233131
dc.identifier.doi 10.1038/ncomms14544
dc.type.version publishedVersion


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