Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

Phillips, L. C.; Lombardo, A.; Ghidini, M.; Yan, W.; Kar-Narayan, S.; Hämäläinen, S. J.; Barbone, M.; Milana, S.; Van Dijken, S.; Ferrari, A. C.; Mathur, N. D.

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Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

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Title:	Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces
Author(s):	Phillips, L. C. ; Lombardo, A. ; Ghidini, M. ; Yan, W. ; Kar-Narayan, S. ; Hämäläinen, S. J. ; Barbone, M. ; Milana, S. ; Van Dijken, S. ; Ferrari, A. C. ; Mathur, N. D.
Date:	2016-03-14
Language:	en
Pages:	1-5
Department:	University of Cambridge Department of Applied Physics
Series:	Applied Physics Letters, Volume 108, issue 11
ISSN:	0003-6951 1077-3118
DOI-number:	10.1063/1.4942778
Subject:	Physics and Astronomy (miscellaneous), 114 Physical sciences
Keywords:	Physics and Astronomy (miscellaneous), 114 Physical sciences
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Citation: Phillips , L C , Lombardo , A , Ghidini , M , Yan , W , Kar-Narayan , S , Hämäläinen , S J , Barbone , M , Milana , S , Van Dijken , S , Ferrari , A C & Mathur , N D 2016 , ' Tunnelling anisotropic magnetoresistance at La 0.67 Sr 0.33 MnO 3 -graphene interfaces ' Applied Physics Letters , vol 108 , no. 11 , 112405 , pp. 1-5 . DOI: 10.1063/1.4942778
Abstract: Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32-35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

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