Milling a silicon nitride membrane by focused ion beam

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Peltonen, Antti
dc.contributor.author Nguyen, Hung Q.
dc.contributor.author Muhonen, Juha T.
dc.contributor.author Pekola, Jukka P.
dc.date.accessioned 2017-01-19T11:22:53Z
dc.date.issued 2016-11-01
dc.identifier.citation Peltonen , A , Nguyen , H Q , Muhonen , J T & Pekola , J P 2016 , ' Milling a silicon nitride membrane by focused ion beam ' JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B, NANOTECHNOLOGY & MICROELECTRONICS , vol 34 , no. 6 , 062201 , pp. 1-6 . DOI: 10.1116/1.4963895 en
dc.identifier.issn 2166-2746
dc.identifier.other PURE UUID: ee9e60ea-d7f6-40a4-a34c-076eaf4e9ef7
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/milling-a-silicon-nitride-membrane-by-focused-ion-beam(ee9e60ea-d7f6-40a4-a34c-076eaf4e9ef7).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=84991790826&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/9115166/1.4963895.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/24375
dc.description.abstract An ultrathin amorphous membrane, such as that made of silicon nitride (SiN) suspended on silicon substrate, is a popular platform for various applications. However, its hardness causes many difficult technical problems for patterning, especially when combined with other fabrication processes. In nanofabrication, focused ion beam (FIB) is a popular milling technique. It would be a perfect tool for perforating the SiN membrane, but the ion beam charges the membrane, induces stress, and breaks them sporadically. The authors design a metallic structure near the cutting area to neutralize the charges. It reduces stress on the membrane and enables the perforation. Commercial SiN membranes are perforated with FIB and are suspended on thin legs on silicon chip. The authors study and discuss various designs and the applicability of this approach. en
dc.format.extent 1-6
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B, NANOTECHNOLOGY & MICROELECTRONICS en
dc.relation.ispartofseries Volume 34, issue 6 en
dc.rights openAccess en
dc.subject.other Electronic, Optical and Magnetic Materials en
dc.subject.other Instrumentation en
dc.subject.other Process Chemistry and Technology en
dc.subject.other Surfaces, Coatings and Films en
dc.subject.other Materials Chemistry en
dc.subject.other Electrical and Electronic Engineering en
dc.subject.other 221 Nanotechnology en
dc.subject.other 114 Physical sciences en
dc.title Milling a silicon nitride membrane by focused ion beam en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department School services, ELEC
dc.contributor.department Department of Applied Physics
dc.contributor.department O.V.Lounasmaa-laboratorio
dc.subject.keyword Electronic, Optical and Magnetic Materials
dc.subject.keyword Instrumentation
dc.subject.keyword Process Chemistry and Technology
dc.subject.keyword Surfaces, Coatings and Films
dc.subject.keyword Materials Chemistry
dc.subject.keyword Electrical and Electronic Engineering
dc.subject.keyword 221 Nanotechnology
dc.subject.keyword 114 Physical sciences
dc.identifier.urn URN:NBN:fi:aalto-201701191322
dc.identifier.doi 10.1116/1.4963895
dc.date.embargo info:eu-repo/date/embargoEnd/2017-10-17


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