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Atomic layer deposition of transparent semiconducting oxide CuCrO2 thin films

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Tripathi, T.S.
dc.contributor.author Niemelä, Janne-Petteri
dc.contributor.author Karppinen, Maarit
dc.date.accessioned 2016-11-08T12:16:07Z
dc.date.issued 2015-07-11
dc.identifier.citation Tripathi , T S , Niemelä , J-P & Karppinen , M 2015 , ' Atomic layer deposition of transparent semiconducting oxide CuCrO 2 thin films ' , Journal of Materials Chemistry C , vol. 3 , no. 32 , pp. 8364-8371 . https://doi.org/10.1039/C5TC01384D , https://doi.org/10.1039/c5tc01384d en
dc.identifier.issn 2050-7526
dc.identifier.issn 2050-7534
dc.identifier.other PURE UUID: faf30fc5-6f84-4788-934e-5574e6075eb5
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/atomic-layer-deposition-of-transparent-semiconducting-oxide-cucro2-thin-films(faf30fc5-6f84-4788-934e-5574e6075eb5).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=84938695051&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/9124342/ERC_7_accepted.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/23470
dc.description.abstract Atomic layer deposition (ALD) is a vital gas-phase technique for atomic-level thickness-controlled deposition of high-quality thin films on various substrate morphologies owing to its self-limiting gas-surface reaction mechanism. Here we report the ALD fabrication of thin films of the semiconducting CuCrO2 oxide that is a highly prospective candidate for transparent electronics applications. In our process, copper 2,2,6,6-tetramethyl-3,5-heptanedionate (Cu(thd)2) and chromium acetyl acetonate (Cr(acac)3) are used as the metal precursors and ozone as the oxygen source. Smooth and homogeneous thin films with an accurately controlled metal composition can be deposited in the temperature range of 240-270 °C; a post-deposition anneal at 700-950 °C in an Ar atmosphere then results in well crystalline films with a delafossite structure. Electrical transport measurements confirm the p-type semiconducting behavior of the films. The direct bandgap is determined from UV-vis spectrophotometric measurements to be 3.09 eV.The observed transmittance is greater than 75% in the visible range. en
dc.format.extent 8364-8371
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation info:eu-repo/grantAgreement/EC/FP7/339478/EU//LAYERENG-HYBMAT
dc.relation.ispartofseries JOURNAL OF MATERIALS CHEMISTRY C en
dc.relation.ispartofseries Volume 3, issue 32 en
dc.rights openAccess en
dc.title Atomic layer deposition of transparent semiconducting oxide CuCrO2 thin films en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Chemistry en
dc.identifier.urn URN:NBN:fi:aalto-201611085558
dc.identifier.doi 10.1039/C5TC01384D
dc.type.version acceptedVersion


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