Calculation of positron annihilation characteristics of six main defects in 6H -SiC and the possibility to distinguish them experimentally

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Linez, F.
dc.contributor.author Makkonen, I.
dc.contributor.author Tuomisto, F.
dc.date.accessioned 2016-10-13T06:10:12Z
dc.date.issued 2016-07-06
dc.identifier.citation Linez , F , Makkonen , I & Tuomisto , F 2016 , ' Calculation of positron annihilation characteristics of six main defects in 6H -SiC and the possibility to distinguish them experimentally ' PHYSICAL REVIEW B , vol 94 , no. 1 , 014103 , pp. 1-11 . DOI: 10.1103/PhysRevB.94.014103 en
dc.identifier.issn 1098-0121
dc.identifier.issn 1550-235X
dc.identifier.other PURE UUID: 91439b21-25a9-4307-ab52-3f441775e5ec
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/calculation-of-positron-annihilation-characteristics-of-six-main-defects-in-6h-sic-and-the-possibility-to-distinguish-them-experimentally(91439b21-25a9-4307-ab52-3f441775e5ec).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=84978759722&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/6664172/PhysRevB.94.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/22921
dc.description.abstract We have determined positron annihilation characteristics (lifetime and Doppler broadening) in six basic vacancy-type defects of 6H-SiC and two nitrogen-vacancy complexes using ab initio calculations. The positron characteristics obtained allow us to point out which positron technique in the most adapted to identify a particular defect. They show that the coincidence Doppler broadening technique is the most relevant for observing the silicon vacancy-nitrogen complexes, VSiNC, and carbon vacancy-carbon antisite ones, VCCSi. For the other studied defects, the calculated positron characteristics are found to be too close for the defects to be easily distinguished using a single positron annihilation technique. Then it is required to use complementary techniques, positron annihilation based or other. en
dc.format.extent 1-11
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries PHYSICAL REVIEW B en
dc.relation.ispartofseries Volume 94, issue 1 en
dc.rights openAccess en
dc.subject.other Condensed Matter Physics en
dc.subject.other Electronic, Optical and Magnetic Materials en
dc.subject.other 114 Physical sciences en
dc.title Calculation of positron annihilation characteristics of six main defects in 6H -SiC and the possibility to distinguish them experimentally en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword Condensed Matter Physics
dc.subject.keyword Electronic, Optical and Magnetic Materials
dc.subject.keyword 114 Physical sciences
dc.identifier.urn URN:NBN:fi:aalto-201610135021
dc.identifier.doi 10.1103/PhysRevB.94.014103
dc.type.version publishedVersion


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