Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspects

 |  Login

Show simple item record

dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en Segercrantz, N. Makkonen, I. Slotte, J. Kujala, J. Veal, T. D. Ashwin, M. J. Tuomisto, F. 2016-09-23T08:18:04Z 2015-08-28
dc.identifier.citation Segercrantz , N , Makkonen , I , Slotte , J , Kujala , J , Veal , T D , Ashwin , M J & Tuomisto , F 2015 , ' Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspects ' JOURNAL OF APPLIED PHYSICS , vol 118 , no. 8 , 085708 , pp. 1-9 . DOI: 10.1063/1.4929751 en
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.other PURE UUID: b33f3cde-0faa-4d90-bfd7-4877d42fa014
dc.identifier.other PURE ITEMURL:
dc.identifier.other PURE FILEURL:
dc.description.abstract The large increase in the p-type conductivity observed when nitrogen is added to GaSb has been studied using positron annihilation spectroscopy and ab initio calculations. Doppler broadening measurements have been conducted on samples of GaNxSb1-x layers grown by molecular beam epitaxy, and the results have been compared with calculated first-principle results corresponding to different defect structures. From the calculated data, binding energies for nitrogen-related defects have also been estimated. Based on the results, the increase in residual hole concentration is explained by an increase in the fraction of negative acceptor-type defects in the material. As the band gap decreases with increasing N concentration, the ionization levels of the defects move closer to the valence band. Ga vacancy-type defects are found to act as positron trapping defects in the material, and the ratio of Ga vacancy-type defects to Ga antisites is found to be higher than that of the p-type bulk GaSb substrate. Beside Ga vacancies, the calculated results imply that complexes of a Ga vacancy and nitrogen could be present in the material. (C) 2015 AIP Publishing LLC. en
dc.format.extent 9
dc.format.extent 1-9
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries JOURNAL OF APPLIED PHYSICS en
dc.relation.ispartofseries Volume 118, issue 8 en
dc.rights openAccess en
dc.subject.other 114 Physical sciences en
dc.subject.other 221 Nanotechnology en
dc.subject.other 214 Mechanical engineering en
dc.subject.other 218 Environmental engineering en
dc.title Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspects en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword MOLECULAR-BEAM EPITAXY
dc.subject.keyword AUGMENTED-WAVE METHOD
dc.subject.keyword BAND-GAP REDUCTION
dc.subject.keyword GROWN GANAS
dc.subject.keyword ALLOYS
dc.subject.keyword PHOTOLUMINESCENCE
dc.subject.keyword ANNIHILATION
dc.subject.keyword SEMICONDUCTORS
dc.subject.keyword 114 Physical sciences
dc.subject.keyword 221 Nanotechnology
dc.subject.keyword 214 Mechanical engineering
dc.subject.keyword 218 Environmental engineering
dc.identifier.urn URN:NBN:fi:aalto-201609234346
dc.identifier.doi 10.1063/1.4929751
dc.type.version publishedVersion info:eu-repo/date/embargoEnd/2016-09-01

Files in this item

Files Size Format View

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record

Search archive

Advanced Search

article-iconSubmit a publication


My Account