First-principles calculations of indirect Auger recombination in nitride semiconductors

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en Kioupakis, E. Steiauf, D. Rinke, P. Delaney, K.T. Van de Walle, C.G. 2016-09-23T07:39:40Z 2015
dc.identifier.citation Kioupakis , E , Steiauf , D , Rinke , P , Delaney , K T & Van de Walle , C G 2015 , ' First-principles calculations of indirect Auger recombination in nitride semiconductors ' PHYSICAL REVIEW B , vol 92 , no. 3 , 035207 , pp. 1-15 . DOI: 10.1103/PhysRevB.92.035207 en
dc.identifier.issn 1098-0121
dc.identifier.issn 1550-235X
dc.identifier.other PURE UUID: 77234b02-5825-4bcc-9009-8d59e37aeedc
dc.identifier.other PURE ITEMURL:
dc.identifier.other PURE FILEURL:
dc.description.abstract Auger recombination is an important nonradiative carrier recombination mechanism in many classes of optoelectronic devices. The microscopic Auger processes can be either direct or indirect, mediated by an additional scattering mechanism such as the electron-phonon interaction and alloy disorder scattering. Indirect Auger recombination is particularly strong in nitride materials and affects the efficiency of nitride optoelectronic devices at high powers. Here, we present a first-principles computational formalism for the study of direct and indirect Auger recombination in direct-band-gap semiconductors and apply it to the case of nitride materials. We show that direct Auger recombination is weak in the nitrides and cannot account for experimental measurements. On the other hand, carrier scattering by phonons and alloy disorder enables indirect Auger processes that can explain the observed loss in devices. We analyze the dominant phonon contributions to the Auger recombination rate and the influence of temperature and strain on the values of the Auger coefficients. Auger processes assisted by charged-defect scattering are much weaker than the phonon-assisted ones for realistic defect densities and not important for the device performance. The computational formalism is general and can be applied to the calculation of the Auger coefficient in other classes of optoelectronic materials. en
dc.format.extent 1-15
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries PHYSICAL REVIEW B en
dc.relation.ispartofseries Volume 92, issue 3 en
dc.rights openAccess en
dc.subject.other 114 Physical sciences en
dc.subject.other 221 Nanotechnology en
dc.subject.other 214 Mechanical engineering en
dc.subject.other 218 Environmental engineering en
dc.title First-principles calculations of indirect Auger recombination in nitride semiconductors en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Applied Physics
dc.subject.keyword Auger
dc.subject.keyword droop
dc.subject.keyword efficiency
dc.subject.keyword light emitting diodes
dc.subject.keyword nitrides
dc.subject.keyword 114 Physical sciences
dc.subject.keyword 221 Nanotechnology
dc.subject.keyword 214 Mechanical engineering
dc.subject.keyword 218 Environmental engineering
dc.identifier.urn URN:NBN:fi:aalto-201609234315
dc.identifier.doi 10.1103/PhysRevB.92.035207
dc.type.version publishedVersion

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