Protective capping and surface passivation of III-V nanowires by atomic layer deposition

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Dhaka, Veer
dc.contributor.author Perros, Alexander
dc.contributor.author Naureen, Shagufta
dc.contributor.author Shahid, Naeem
dc.contributor.author Jiang, Hua
dc.contributor.author Kakko, Joona-Pekko
dc.contributor.author Haggren, Tuomas
dc.contributor.author Kauppinen, Esko
dc.contributor.author Srinivasan, Anand
dc.contributor.author Lipsanen, Harri
dc.date.accessioned 2016-09-16T10:03:21Z
dc.date.issued 2016-01-01
dc.identifier.citation Dhaka , V , Perros , A , Naureen , S , Shahid , N , Jiang , H , Kakko , J-P , Haggren , T , Kauppinen , E , Srinivasan , A & Lipsanen , H 2016 , ' Protective capping and surface passivation of III-V nanowires by atomic layer deposition ' AIP ADVANCES , vol 6 , no. 1 , 015016 , pp. 1-7 . DOI: 10.1063/1.4941063 en
dc.identifier.issn 2158-3226
dc.identifier.other PURE UUID: c411ed4f-7535-41f5-9f16-c5521e2fa077
dc.identifier.other PURE ITEMURL: https://research.aalto.fi/en/publications/protective-capping-and-surface-passivation-of-iiiv-nanowires-by-atomic-layer-deposition(c411ed4f-7535-41f5-9f16-c5521e2fa077).html
dc.identifier.other PURE LINK: http://www.scopus.com/inward/record.url?scp=84956702878&partnerID=8YFLogxK
dc.identifier.other PURE FILEURL: https://research.aalto.fi/files/4316520/1.4941063.pdf
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/22047
dc.description.abstract Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack. en
dc.format.extent 7
dc.format.extent 1-7
dc.format.mimetype application/pdf
dc.language.iso en en
dc.relation.ispartofseries AIP ADVANCES en
dc.relation.ispartofseries Volume 6, issue 1 en
dc.rights openAccess en
dc.subject.other Physics and Astronomy(all) en
dc.subject.other 221 Nanotechnology en
dc.title Protective capping and surface passivation of III-V nanowires by atomic layer deposition en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.contributor.department Department of Micro and Nanosciences
dc.contributor.department Australian National University
dc.contributor.department Department of Applied Physics
dc.contributor.department KTH Royal Institute of Technology
dc.subject.keyword Physics and Astronomy(all)
dc.subject.keyword 221 Nanotechnology
dc.identifier.urn URN:NBN:fi:aalto-201609163929
dc.identifier.doi 10.1063/1.4941063
dc.type.version publishedVersion


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