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Showing 10 out of a total of 12 results for community: 6b Artikkelit / Articles from Research information portal.
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Identification of the VAl-ON defect complex in AlN single crystals
Mäki, J.-M.
;
Makkonen, I.
;
Tuomisto, F.
;
Karjalainen, A.
;
Suihkonen, S.
;
Räisänen, J.
;
Chemekova, T.Yu.
;
Makarov, Yu.N.
(
2011-08-29
)
PHYSICAL REVIEW B,
Volume 84, issue 8
Compensating vacancy defects in Sn- and Mg-doped In2O3
Korhonen, E.
;
Tuomisto, F.
;
Bierwagen, O.
;
Speck, J.S.
;
Galazka, Z.
(
2014-12
)
PHYSICAL REVIEW B,
Volume 90, issue 24
Electrical compensation by Ga vacancies in Ga2O3 thin films
Korhonen, Esa
;
Tuomisto, F.
;
Gogova, D.
;
Wagner, G.
;
Baldini, M.
;
Galazka, Z.
;
Schewski, R.
;
Albrecht, M.
(
2015
)
Applied Physics Letters,
Volume 106, issue 24
Point defects and p-type conductivity in Zn1-xMnxGeAs2
Kilanski, L.
;
Rauch, C.
;
Tuomisto, F.
;
Podgórni, A.
;
Dynowska, E.
;
Dobrowolski, W.
;
Fedorchenko, I.V.
;
Marenkin, S.F.
(
2014
)
JOURNAL OF APPLIED PHYSICS,
Volume 116, issue 2
Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions
Venkatachalapathy, Vishnukanthan
;
Galeckas, Augustinas
;
Zubiaga, Asier
;
Tuomisto, Filip
;
Kuznetsov, Andrej Yu
(
2010
)
JOURNAL OF APPLIED PHYSICS,
Volume 108, issue 4
Defect redistribution in post-irradiation rapid-thermal-annealed InN
Reurings, Floris
;
Rauch, Christian
;
Tuomisto, Filip
;
Jones, Rebecca E.
;
Yu, Kin M.
;
Walukiewicz, Wladek
;
Schaff, William J.
(
2010-10
)
PHYSICAL REVIEW B,
Volume 82, issue 15
Evolution of E-centers during the annealing of Sb-doped Si0.8Ge0.2
Kilpeläinen, S.
;
Tuomisto, F.
;
Slotte, J.
;
Lundsgaard Hansen, J.
;
Nylandsted Larsen, A.
(
2011-03
)
PHYSICAL REVIEW B,
Volume 83, issue 9
Identification of substitutional Li in n-type ZnO and its role as an acceptor
Johansen, K.M.
;
Zubiaga, A.
;
Makkonen, I.
;
Tuomisto, F.
;
Neuvonen, P.T.
;
Knutsen, K.E.
;
Monakhov, E.V.
;
Kuznetsov, A.Y.
;
Svensson, B.G.
(
2011-06
)
PHYSICAL REVIEW B,
Volume 83, issue 24
He implantation induced defects in InN
Linez, F.
;
Ritt, M.
;
Rauch, C.
;
Kilanski, L.
;
Choi, S.
;
Speck, J.S.
;
Räisänen, J.
;
Tuomisto, F.
(
2014
)
Journal of Physics: Conference Series,
Volume 505, issue 1
Influence of Ga/N ratio on morphology, Ga vacancies and electrical transport in (0001) GaN grown by plasma-assisted molecular beam epitaxy at high temperature
Koblmüller, G.
;
Reurings, Floris
;
Tuomisto, Filip
;
Speck, J.S.
(
2010
)
Applied Physics Letters,
Volume 97, issue 19
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Author
Tuomisto, F. (7)
Tuomisto, Filip (5)
Speck, J.S. (3)
Galazka, Z. (2)
Kilanski, L. (2)
Makkonen, I. (2)
Rauch, C. (2)
Reurings, Floris (2)
Räisänen, J. (2)
Svensson, B.G. (2)
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114 Physical sciences (12)
214 Mechanical engineering (12)
218 Environmental engineering (12)
221 Nanotechnology (12)
vacancy (12)
positron (10)
ZnO (3)
InN (2)
absorption (1)
AlN (1)
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2015 (1)
2014 (3)
2011 (3)
2010 (5)
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en (12)