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Showing 10 out of a total of 12 results for community: 6b Artikkelit / Articles from Research information portal. (0.008 seconds)

Now showing items 1-10 of 12

Identification of the VAl-ON defect complex in AlN single crystals

Mäki, J.-M.; Makkonen, I.; Tuomisto, F.; Karjalainen, A.; Suihkonen, S.; Räisänen, J.; Chemekova, T.Yu.; Makarov, Yu.N. (2011-08-29)

PHYSICAL REVIEW B, Volume 84, issue 8
Compensating vacancy defects in Sn- and Mg-doped In2O3

Korhonen, E.; Tuomisto, F.; Bierwagen, O.; Speck, J.S.; Galazka, Z. (2014-12)

PHYSICAL REVIEW B, Volume 90, issue 24
Electrical compensation by Ga vacancies in Ga2O3 thin films

Korhonen, Esa; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M. (2015)

Applied Physics Letters, Volume 106, issue 24
Point defects and p-type conductivity in Zn1-xMnxGeAs2

Kilanski, L.; Rauch, C.; Tuomisto, F.; Podgórni, A.; Dynowska, E.; Dobrowolski, W.; Fedorchenko, I.V.; Marenkin, S.F. (2014)

JOURNAL OF APPLIED PHYSICS, Volume 116, issue 2
Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions

Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Zubiaga, Asier; Tuomisto, Filip; Kuznetsov, Andrej Yu (2010)

JOURNAL OF APPLIED PHYSICS, Volume 108, issue 4
Defect redistribution in post-irradiation rapid-thermal-annealed InN

Reurings, Floris; Rauch, Christian; Tuomisto, Filip; Jones, Rebecca E.; Yu, Kin M.; Walukiewicz, Wladek; Schaff, William J. (2010-10)

PHYSICAL REVIEW B, Volume 82, issue 15
Evolution of E-centers during the annealing of Sb-doped Si0.8Ge0.2

Kilpeläinen, S.; Tuomisto, F.; Slotte, J.; Lundsgaard Hansen, J.; Nylandsted Larsen, A. (2011-03)

PHYSICAL REVIEW B, Volume 83, issue 9
Identification of substitutional Li in n-type ZnO and its role as an acceptor

Johansen, K.M.; Zubiaga, A.; Makkonen, I.; Tuomisto, F.; Neuvonen, P.T.; Knutsen, K.E.; Monakhov, E.V.; Kuznetsov, A.Y.; Svensson, B.G. (2011-06)

PHYSICAL REVIEW B, Volume 83, issue 24
He implantation induced defects in InN

Linez, F.; Ritt, M.; Rauch, C.; Kilanski, L.; Choi, S.; Speck, J.S.; Räisänen, J.; Tuomisto, F. (2014)

Journal of Physics: Conference Series, Volume 505, issue 1
Influence of Ga/N ratio on morphology, Ga vacancies and electrical transport in (0001) GaN grown by plasma-assisted molecular beam epitaxy at high temperature

Koblmüller, G.; Reurings, Floris; Tuomisto, Filip; Speck, J.S. (2010)

Applied Physics Letters, Volume 97, issue 19