Atomistic modelling of anisotropic etching of crystalline silicon

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Gosálvez, Miguel A.
dc.date.accessioned 2012-02-10T08:55:19Z
dc.date.available 2012-02-10T08:55:19Z
dc.date.issued 2003-09-19
dc.identifier.isbn 951-22-6707-1
dc.identifier.issn 1455-1802
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/2108
dc.description.abstract An atomistic model for the simulation of anisotropic wet chemical etching of crystalline silicon is developed. Special attention is paid to the relation between the atomistic processes, the mesoscopic features of the surface morphology and the macroscopic anisotropy of the process, bridging the different length scales. The development of the atomistic model is made by direct comparison of atomistic kinetic Monte Carlo and Cellular Automaton simulations with experimental results, guided by first-principles calculations. The model explains the anisotropy of the etching process and the orientation-dependent surface morphology as two different manifestations of the same atomistic mechanisms, namely, the weakening of backbonds following OH termination of surface atoms and the existence of significant interaction between the terminating species (H / OH). The versatility of the atomistic model is demonstrated by the concentration and time dependence of the simulated under-etched structures and surface morphology. A substantial effort has been made to develop an efficient program in order to simulate the etching process in arbitrarily oriented, large, micrometer-scale systems in the presence (or absence) of masking patterns and considering the effects of temperature and etchant concentration. The program has a great potential for use in the optimization of the processing parameters in industrial applications. en
dc.format.extent 41, [129]
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Helsinki University of Technology en
dc.publisher Teknillinen korkeakoulu fi
dc.relation.ispartofseries Dissertations / Laboratory of Physics, Helsinki University of Technology en
dc.relation.ispartofseries 123 en
dc.relation.haspart Gosálvez M. A., Nieminen R. M., Kilpinen P., Haimi E. and Lindroos V., 2001. Anisotropic wet chemical etching of crystalline silicon: atomistic Monte-Carlo simulations and experiments. Applied Surface Science 178, No. 1-4, pages 7-26. [article1.pdf] © 2001 Elsevier Science. By permission.
dc.relation.haspart Gosálvez M. A., Foster A. S. and Nieminen R. M., 2002. Multiscale modeling of anisotropic wet chemical etching of crystalline silicon. Europhysics Letters 60, No. 3, pages 467-473. [article2.pdf] © 2002 EDP Sciences. By permission.
dc.relation.haspart Gosálvez M. A., Foster A. S. and Nieminen R. M., 2002. Atomistic simulations of surface coverage effects in anisotropic wet chemical etching of crystalline silicon. Applied Surface Science 202, No. 3-4, pages 160-182. [article3.pdf] © 2002 Elsevier Science. By permission.
dc.relation.haspart Gosálvez M. A., Foster A. S. and Nieminen R. M., 2003. Dependence of the anisotropy of wet chemical etching of silicon on the amount of surface coverage by OH radicals. Sensors and Materials 15, No. 2, pages 53-65.
dc.relation.haspart Gosálvez M. A. and Nieminen R. M., 2003. Surface morphology during anisotropic wet chemical etching of crystalline silicon. New Journal of Physics 5, pages 100.1-100.28. [article5.pdf] © 2003 Institute of Physics Publishing Ltd. By permission.
dc.relation.haspart Gosálvez M. A. and Nieminen R. M., 2003. Relation between macroscopic and microscopic activation energies in non-equilibrium surface processing. Physical Review E, in press. [article6.pdf] © 2003 by authors and © 2003 American Physical Society. By permission.
dc.subject.other Physics en
dc.title Atomistic modelling of anisotropic etching of crystalline silicon en
dc.type G5 Artikkeliväitöskirja fi
dc.description.version reviewed en
dc.contributor.department Department of Engineering Physics and Mathematics en
dc.contributor.department Teknillisen fysiikan ja matematiikan osasto fi
dc.subject.keyword anisotropic wet chemical etching en
dc.subject.keyword surface morphology en
dc.subject.keyword Monte Carlo en
dc.subject.keyword cellular automaton en
dc.subject.keyword mask en
dc.subject.keyword convex corner en
dc.subject.keyword crystalline silicon en
dc.subject.keyword activation energy en
dc.subject.keyword surface processing en
dc.identifier.urn urn:nbn:fi:tkk-000767
dc.type.dcmitype text en
dc.type.ontasot Väitöskirja (artikkeli) fi
dc.type.ontasot Doctoral dissertation (article-based) en
dc.contributor.lab Laboratory of Physics en
dc.contributor.lab Fysiikan laboratorio fi


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