Fabrication and characterization of GaInNAs quantum structures

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Hakkarainen, Teppo
dc.date.accessioned 2012-02-10T08:47:25Z
dc.date.available 2012-02-10T08:47:25Z
dc.date.issued 2003-06-13
dc.identifier.isbn 951-22-6517-6
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/2085
dc.description.abstract The fabrication and the structural and optical properties of bulk, quantum well, and quantum dot structures prepared of GaAsN and GaInNAs III-V compound semiconductors are studied in this thesis. Metalorganic vapor phase epitaxy is used to grow epitaxial layers on GaAs. The composition of the grown structures is investigated by x-ray diffraction. The nitrogen concentration of the GaAsN and GaInNAs layers is found to be strongly dependent on the growth temperature and the molar flow ratios of the different precursors. It is shown that an increase in the indium concentration of GaInNAs results in a decrease of the nitrogen incorporation. Photoluminescence spectroscopy is employed to study the optical properties of the fabricated epitaxial structures. The optical quality of quantum well structures is found to decrease with increasing nitrogen concentration. However, in-situ and post-growth thermal annealing procedures as well as post-growth laser treatment are investigated and used to improve the optical properties. Luminescence wavelengths of up to 1.55 μm are observed from GaInNAs quantum well structures. The effect of nitrogen on the optical properties of various self-assembled quantum dot structures is studied. The surface morphology of these structures is investigated by atomic force microscopy. Although the incorporation of nitrogen into GaIn(N)As quantum dots is found to be negligible, the size and the areal density of the self-organized GaIn(N)As islands can be controlled and the optical properties improved by varying the nitrogen precursor flow. It is found that the luminescence wavelength and intensity of GaInAs quantum dots in the 1.3 μm wavelength range can be increased by embedding the islands in a GaInNAs barrier layer. Also strain-induced GaInNAs quantum dots are fabricated using InP islands as stressors. en
dc.format.extent 39, [54]
dc.format.mimetype application/pdf
dc.language.iso en en
dc.publisher Helsinki University of Technology en
dc.publisher Teknillinen korkeakoulu fi
dc.relation.haspart Toivonen J., Hakkarainen T., Sopanen M. and Lipsanen H., 2000. High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy. Journal of Crystal Growth 221, pages 456-460.
dc.relation.haspart Hakkarainen T., Toivonen J., Sopanen M. and Lipsanen H., 2001. Self-assembled GaIn(N)As quantum dots: Enhanced luminescence at 1.3 μm. Applied Physics Letters 79, pages 3932-3934.
dc.relation.haspart Hakkarainen T., Toivonen J., Sopanen M. and Lipsanen H., 2002. GaInNAs quantum well structures for 1.55 μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth 234, pages 631-636.
dc.relation.haspart Toivonen J., Hakkarainen T., Sopanen M., Lipsanen H., Oila J. and Saarinen K., 2003. Observation of defect complexes containing Ga vacancies in GaAsN. Applied Physics Letters 82, pages 40-42.
dc.relation.haspart Hakkarainen T., Toivonen J., Sopanen M. and Lipsanen H., 2003. Wavelength extension of GaInAs / GaIn(N)As quantum dot structures grown on GaAs. Journal of Crystal Growth 248, pages 339-342.
dc.relation.haspart Toivonen J., Tuomi T., Riikonen J., Knuuttila L., Hakkarainen T., Sopanen M., Lipsanen H., McNally P. J., Chen W. and Lowney D., Misfit dislocations in GaAsN - GaAs interface. Accepted to Journal of Materials Science: Materials in Electronics.
dc.relation.haspart Koskenvaara H., Hakkarainen T., Sopanen M. and Lipsanen H., 2003. Photoluminescence study of strain-induced GaInNAs / GaAs quantum dots. Journal of Materials Science: Materials in Electronics 14, pages 357-360.
dc.relation.haspart Toivonen J., Hakkarainen T., Sopanen M. and Lipsanen H., 2003. Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells. IEE Proceedings - Optoelectronics 150, pages 68-71.
dc.subject.other Electrical engineering en
dc.title Fabrication and characterization of GaInNAs quantum structures en
dc.type G5 Artikkeliväitöskirja fi
dc.description.version reviewed en
dc.contributor.department Department of Electrical and Communications Engineering en
dc.contributor.department Sähkö- ja tietoliikennetekniikan osasto fi
dc.subject.keyword semiconductors en
dc.subject.keyword GaAsN en
dc.subject.keyword GaInNAs en
dc.subject.keyword fabrication en
dc.subject.keyword structural properties en
dc.subject.keyword optical properties en
dc.subject.keyword quantum structures en
dc.identifier.urn urn:nbn:fi:tkk-000534
dc.type.dcmitype text en
dc.type.ontasot Väitöskirja (artikkeli) fi
dc.type.ontasot Doctoral dissertation (article-based) en
dc.contributor.lab Optoelectronics Laboratory en
dc.contributor.lab Optoelektroniikan laboratorio fi


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