Title: | Cation-anion vacancy complexes in semiconducting compounds Kationi-anioni-vakanssikompleksit seospuolijohteissa |
Author(s): | Korhonen, Esa |
Date: | 2016 |
Language: | en |
Pages: | 67 + app. 47 |
Department: | Teknillisen fysiikan laitos Department of Applied Physics |
ISBN: | 978-952-60-6742-1 (electronic) 978-952-60-6741-4 (printed) |
Series: | Aalto University publication series DOCTORAL DISSERTATIONS, 63/2016 |
ISSN: | 1799-4942 (electronic) 1799-4934 (printed) 1799-4934 (ISSN-L) |
Supervising professor(s): | Tuomisto, Filip, Prof., Aalto University, Department of Applied Physics, Finland |
Subject: | Physics |
Keywords: | semiconductor, transparent conducting oxide, positron spectroscopy, puolijohteet, läpinäkyvät johtavat oksidit, positronispektroskopia |
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Abstract:Tässä työssä tutkittiin positronispektroskopialla monimutkaisia ja optisesti merkittäviä puolijohdemateriaaleja. Teoreettiset mallit auttoivat koetulosten tulkinnassa. |
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Parts:[Publication 1]: E. Korhonen, K. Kuitunen, F. Tuomisto, A. Urbaniak, M. Igalson, J. Larsen, L. Gutay, S. Siebentritt, and Y. Tomm. Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2. Physical Review B, 86, 6, 064102, August 2012. DOI: 10.1103/PhysRevB.86.064102 View at Publisher [Publication 2]: E. Korhonen, F. Tuomisto, O. Bierwagen, J. S. Speck, and Z. Galazka. Compensating vacancy defects in Sn-and Mg-doped In2O3. Physical Review B, 90, 24, 245307, December 2014. DOI: 10.1103/PhysRevB.90.245307 View at Publisher [Publication 3]: E. Korhonen, V. Prozheeva, F. Tuomisto, O. Bierwagen, J. S. Speck, M. E. White, Z. Galazka, H. Liu, N. Izyumskaya, V. Avrutin, and others. Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO. Semiconductor Science and Technology, 30, 2, 024011, January 2015. DOI: 10.1088/0268-1242/30/2/024011 View at Publisher [Publication 4]: E. Korhonen, F. Tuomisto, D. Gogova, G.Wagner, M. Baldini, Z. Galazka, R. Schewski, and M. Albrecht. Electrical compensation by Ga vacancies in Ga2O3 thin films. Applied Physics Letters, 106, 24, 242103, June 2015. DOI: 10.1063/1.4922814 View at Publisher [Publication 5]: I. Makkonen, E. Korhonen, V. Prozheeva, and F. Tuomisto. Identification of vacancy defect complexes in transparent semiconducting oxides: the cases of ZnO, In2O3 and SnO2. Journal of Physics: Condensed Matter, In press, 7 pages, 2016. DOI: 10.1088/0953-8984/28/22/224002 View at Publisher |
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