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Influence of elastically pinned magnetic domain walls on magnetization reversal in multiferroic heterostructures

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Casiraghi, Arianna
dc.contributor.author Rincón Domínguez, Teresa
dc.contributor.author Rößler, Stefan
dc.contributor.author Franke, Kévin J. A.
dc.contributor.author López González, Diego
dc.contributor.author Hämäläinen, Sampo J.
dc.contributor.author Frömter, Robert
dc.contributor.author Oepen, Hans Peter
dc.contributor.author van Dijken, Sebastiaan
dc.date.accessioned 2016-04-15T09:01:16Z
dc.date.available 2016-04-15T09:01:16Z
dc.date.issued 2015
dc.identifier.citation Casiraghi, Arianna & Rincón Domínguez, Teresa & Rößler, Stefan & Franke, Kévin J. A. & López González, Diego & Hämäläinen, Sampo J. & Frömter, Robert & Oepen, Hans Peter & van Dijken, Sebastiaan. 2015. Influence of elastically pinned magnetic domain walls on magnetization reversal in multiferroic heterostructures. Physical Review B. Volume 92, Issue 5. 054406/1-8. 2469-9950 (printed). DOI: 10.1103/physrevb.92.054406. en
dc.identifier.issn 2469-9950 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/20117
dc.description.abstract In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectricand ferromagnetic subsystems, magnetic domain walls are firmly pinned on top of ferroelectric domainboundaries. In this work, we investigate the influence of pinned magnetic domain walls on the magnetizationreversal process in a Co40Fe40B20 wedge film that is coupled to a ferroelectric BaTiO3 substrate via interfacestrain transfer.We show that the magnetic field direction can be used to select between two distinct magnetizationreversal mechanisms, namely, (1) double switching events involving alternate stripe domains at a time or(2) synchronized switching of all domains. Furthermore, scaling of the switching fields with domain widthand film thickness is also found to depend on the field orientation. These results are explained by considering the dissimilar energies of the two types of pinned magnetic domain walls that are formed in the system. en
dc.format.extent 054406/1-8
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society (APS) en
dc.relation.ispartofseries Physical Review B en
dc.relation.ispartofseries Volume 92, Issue 5
dc.rights © 2015 American Physical Society (APS). This is the accepted version of the following article: Casiraghi, Arianna & Rincón Domínguez, Teresa & Rößler, Stefan & Franke, Kévin J. A. & López González, Diego & Hämäläinen, Sampo J. & Frömter, Robert & Oepen, Hans Peter & van Dijken, Sebastiaan. 2015. Influence of elastically pinned magnetic domain walls on magnetization reversal in multiferroic heterostructures. Phys. Rev. B. Volume 92, Issue 5. ISSN 2469-9950 (printed). DOI: 10.1103/physrevb.92.054406, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.054406. en
dc.subject.other Materials science en
dc.subject.other Physics en
dc.title Influence of elastically pinned magnetic domain walls on magnetization reversal in multiferroic heterostructures en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Physical Society (APS)
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword magnetic anisotropy en
dc.subject.keyword magnetic switching en
dc.subject.keyword ferroelectric-ferromagnetic heterostructures en
dc.identifier.urn URN:NBN:fi:aalto-201604141766
dc.type.dcmitype text en
dc.identifier.doi 10.1103/physrevb.92.054406
dc.type.version Final published version en


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