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Atomic layer deposition of Al-doped ZnO thin films

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Tynell, Tommi
dc.contributor.author Yamauchi, Hisao
dc.contributor.author Karppinen, Maarit
dc.contributor.author Okazaki, Ryuji
dc.contributor.author Terasaki, Ichiro
dc.date.accessioned 2015-10-14T09:01:49Z
dc.date.available 2015-10-14T09:01:49Z
dc.date.issued 2013
dc.identifier.citation Tynell, Tommi & Yamauchi, Hisao & Karppinen, Maarit & Okazaki, Ryuji & Terasaki, Ichiro. 2013. Atomic layer deposition of Al-doped ZnO thin films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. Volume 31, Issue 1. 01A109/1-4. ISSN 0734-2101 (printed). DOI: 10.1116/1.4757764. en
dc.identifier.issn 0734-2101 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/18019
dc.description.abstract Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al 2O3 on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al 2O3 phase and no further carrier doping of ZnO is observed. en
dc.format.extent 01A109/1-4
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Vacuum Society en
dc.relation.ispartofseries Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films en
dc.relation.ispartofseries Volume 31, Issue 1
dc.rights © 2013 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. Volume 31, Issue 1 and may be found at http://scitation.aip.org/content/avs/journal/jvsta/31/1/10.1116/1.4757764. en
dc.subject.other Chemistry en
dc.title Atomic layer deposition of Al-doped ZnO thin films en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Vacuum Society
dc.contributor.school Kemian tekniikan korkeakoulu fi
dc.contributor.school School of Chemical Technology en
dc.contributor.department Kemian laitos fi
dc.contributor.department Department of Chemistry en
dc.subject.keyword zinc oxide en
dc.subject.keyword thin films en
dc.subject.keyword doping en
dc.subject.keyword superconductors en
dc.subject.keyword aluminium en
dc.identifier.urn URN:NBN:fi:aalto-201510144607
dc.type.dcmitype text en
dc.identifier.doi 10.1116/1.4757764
dc.type.version Final published version en


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