Transition in electron scattering mechanism in atomic layer deposited Nb:TiO2 thin films

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Niemelä, Janne-Petteri
dc.contributor.author Hirose, Yasushi
dc.contributor.author Hasegawa, Tetsuya
dc.contributor.author Karppinen, Maarit
dc.date.accessioned 2015-10-08T09:01:57Z
dc.date.available 2015-10-08T09:01:57Z
dc.date.issued 2015
dc.identifier.citation Niemelä, Janne-Petteri & Hirose, Yasushi & Hasegawa, Tetsuya & Karppinen, Maarit. 2015. Transition in electron scattering mechanism in atomic layer deposited Nb:TiO2 thin films. Applied Physics Letters. Volume 106, Issue 4. 042101/1-4. ISSN 0003-6951 (printed). DOI: 10.1063/1.4906865. en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17999
dc.description.abstract We characterized transport and optical properties of atomic layer deposited Nb:TiO2 thin films on glass substrates. These promising transparent conducting oxide (TCO) materials show minimum resistivity of 1.0 × 10−3 Ω cm at 300 K and high transmittance in the visible range. Low-temperature (2–300 K) Hall measurements and the Drude fitting of the Vis-NIR optical spectra indicate a transition in the scattering mechanism from grain boundary scattering to intra-grain scattering with increasing Nb content, thus underlining enhancement of the grain size in the low doping regime as the key for further improved TCO properties. en
dc.format.extent 042101/1-4
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 106, Issue 4
dc.rights © 2015 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters. Volume 106, Issue 4 and may be found at http://scitation.aip.org/content/aip/journal/apl/106/4/10.1063/1.4906865. en
dc.subject.other Chemistry en
dc.subject.other Physics en
dc.title Transition in electron scattering mechanism in atomic layer deposited Nb:TiO2 thin films en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder AIP Publishing
dc.contributor.school Kemian tekniikan korkeakoulu fi
dc.contributor.school School of Chemical Technology en
dc.contributor.department Kemian laitos fi
dc.contributor.department Department of Chemistry en
dc.subject.keyword niobium en
dc.subject.keyword electron scattering en
dc.subject.keyword thin films en
dc.identifier.urn URN:NBN:fi:aalto-201510084564
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.4906865
dc.type.version Final published version en


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