Noise of a single electron transistor on a Si3N4 membrane

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Hakonen, Pertti J.
dc.contributor.author Ikonen, J. M.
dc.contributor.author Parts, U.
dc.contributor.author Penttilä, J. S.
dc.contributor.author Roschier, L. R.
dc.contributor.author Paalanen, M. A.
dc.date.accessioned 2015-09-28T09:01:48Z
dc.date.available 2015-09-28T09:01:48Z
dc.date.issued 1999
dc.identifier.citation Hakonen, Pertti J. & Ikonen, J. M. & Parts, U. & Penttilä, J. S. & Roschier, L. R. & Paalanen, M. A.. 1999. Noise of a single electron transistor on a Si3N4 membrane. Journal of Applied Physics. Volume 86, Issue 5. 2684-2686. ISSN 0021-8979 (printed). DOI: 10.1063/1.371110. en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17891
dc.description.abstract We have investigated the influence of electron-beam writing on the creation of charge trapping centers which cause 1/f noise in single electron transistors (SET). Two Al/AlOx/Al devices were compared: one where the SET is on a {100} silicon wafer covered by a 120-nm-thick layer of Si3N4, and another one in which the Si was etched away from below the nitride membrane before patterning the SET. The background charge noise was found to be 1×10 exp −3 e/√Hz at 10 Hz in both devices, independent of the substrate thickness. en
dc.format.extent 2684-2686
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 86, Issue 5
dc.rights © 1999 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 86, Issue 5 and may be found at http://scitation.aip.org/content/aip/journal/jap/86/5/10.1063/1.371110. en
dc.subject.other Physics en
dc.title Noise of a single electron transistor on a Si3N4 membrane en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder AIP Publishing
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword noise en
dc.subject.keyword single electron transistors en
dc.subject.keyword Si3N4 membrane en
dc.identifier.urn URN:NBN:fi:aalto-201509284482
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.371110
dc.type.version Final published version en


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