Single-electron transistor made of two crossing multiwalled carbon nanotubes and its noise properties

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Ahlskog, M.
dc.contributor.author Tarkiainen, R.
dc.contributor.author Roschier, L.
dc.contributor.author Hakonen, Pertti J.
dc.date.accessioned 2015-09-28T09:01:38Z
dc.date.available 2015-09-28T09:01:38Z
dc.date.issued 2000
dc.identifier.citation Ahlskog, M. & Tarkiainen, R. & Roschier, L. & Hakonen, Pertti J.. 2000. Single-electron transistor made of two crossing multiwalled carbon nanotubes and its noise properties. Applied Physics Letters. Volume 77, Issue 24. 4037-4039. ISSN 0003-6951 (printed). DOI: 10.1063/1.1332107 en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17889
dc.description.abstract A three-terminal nanotube device was fabricated from two multiwalled nanotubes by pushing one on top of the other using an atomic-force microscope. The lower nanotube, with gold contacts at both ends, acted as the central island of a single-electron transistor while the upper one functioned as a gate electrode. Coulomb blockade oscillations were observed on the nanotube at sub-Kelvin temperatures. The voltage noise of the nanotube single-electron transistor (SET) was gain dependent as in conventional SETs. The charge sensitivity at 10 Hz was 6×10 exp −4  e/√Hz. en
dc.format.extent 4037-4039
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 77, Issue 24
dc.rights © 2000 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 77, Issue 24 and may be found at http://scitation.aip.org/content/aip/journal/apl/77/24/10.1063/1.1332107. en
dc.subject.other Physics en
dc.title Single-electron transistor made of two crossing multiwalled carbon nanotubes and its noise properties en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder AIP Publishing
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword carbon nanotubes en
dc.subject.keyword atomic-force microscopes en
dc.identifier.urn URN:NBN:fi:aalto-201509284480
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.1332107
dc.type.version Final published version en


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