Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Andresen, S. E. S.
dc.contributor.author Wu, F.
dc.contributor.author Danneau, R.
dc.contributor.author Gunnarsson, D.
dc.contributor.author Hakonen, Pertti J.
dc.date.accessioned 2015-09-25T09:01:47Z
dc.date.available 2015-09-25T09:01:47Z
dc.date.issued 2008
dc.identifier.citation Andresen, S. E. S. & Wu, F. & Danneau, R. & Gunnarsson, D. & Hakonen, Pertti J.. 2008. Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor. Journal of Applied Physics. Volume 104, Issue 3. 033715/1-4. ISSN 0021-8979 (printed). DOI: 10.1063/1.2968123 en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17880
dc.description.abstract We have investigated radio-frequency single-electron transistor operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At a temperature of 4.2 K and with a carrier frequency of 754.2 MHz, we reach a charge sensitivity of 2.3×10 exp −6e/√Hz over a bandwidth of 85 MHz. Our results indicate a gain-bandwidth product of 3.7×10 exp 13 Hz exp (3/2)/e, which is by one order of magnitude better than those for typical radio-frequency single-electron transistors. en
dc.format.extent 033715/1-4
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 104, Issue 3
dc.rights © 2008 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 104, Issue 3 and may be found at http://scitation.aip.org/content/aip/journal/jap/104/3/10.1063/1.2968123. en
dc.subject.other Physics en
dc.title Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder AIP Publishing
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword carbon nanotubes en
dc.subject.keyword single-electron transistors (SET) en
dc.identifier.urn URN:NBN:fi:aalto-201509254474
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.2968123
dc.type.version Final published version en

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