Thermal shot noise in top-gated single carbon nanotube field effect transistors

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Chaste, J.
dc.contributor.author Pallecchi, E.
dc.contributor.author Morfin, P.
dc.contributor.author Feve, G.
dc.contributor.author Kontos, T.
dc.contributor.author Berroir, J.-M.
dc.contributor.author Hakonen, Pertti J.
dc.contributor.author Placais, B.
dc.date.accessioned 2015-09-25T09:01:39Z
dc.date.available 2015-09-25T09:01:39Z
dc.date.issued 2010
dc.identifier.citation Chaste, J. & Pallecchi, E. & Morfin, P. & Feve, G. & Kontos, T. & Berroir, J.-M. & Hakonen, Pertti J. & Placais, B. 2010. Thermal shot noise in top-gated single carbon nanotube field effect transistors. Applied Physics Letters. Volume 96, Issue 19. 192103/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3425889 en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17878
dc.description.abstract The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of one-dimensional nanotransistor. In particular the prediction of a large transconductance correction to the Johnson–Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of 13 μe/√Hz in the 0.2–0.8 GHz band. en
dc.format.extent 192103/1-3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 96, Issue 19
dc.rights © 2010 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 96, Issue 19 and may be found at http://scitation.aip.org/content/aip/journal/apl/96/19/10.1063/1.3425889. en
dc.subject.other Physics en
dc.title Thermal shot noise in top-gated single carbon nanotube field effect transistors en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder AIP Publishing
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword shot noise en
dc.subject.keyword carbon nanotubes en
dc.identifier.urn URN:NBN:fi:aalto-201509254472
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.3425889
dc.type.version Final published version en


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