dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Gebauer, J. | |
dc.contributor.author | Lausmann, M. | |
dc.contributor.author | Staab, T. E. M. | |
dc.contributor.author | Krause-Rehberg, R. | |
dc.contributor.author | Hakala, M. | |
dc.contributor.author | Puska, Martti J. | |
dc.date.accessioned | 2015-09-18T09:01:59Z | |
dc.date.available | 2015-09-18T09:01:59Z | |
dc.date.issued | 1999 | |
dc.identifier.citation | Gebauer, J. & Lausmann, M. & Staab, T. E. M. & Krause-Rehberg, R. & Hakala, M. & Puska, Martti J. 1999. Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs. Physical Review B. Volume 60, Issue 3. 1464-1467. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.60.1464. | en |
dc.identifier.issn | 1550-235X (electronic) | |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/17807 | |
dc.description.abstract | Native vacancies in Te-doped (5×1016–5×1018cm−3) GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation. | en |
dc.format.extent | 1464-1467 | |
dc.format.mimetype | application/pdf | en |
dc.language.iso | en | en |
dc.publisher | American Physical Society (APS) | en |
dc.relation.ispartofseries | Physical Review B | en |
dc.relation.ispartofseries | Volume 60, Issue 3 | |
dc.rights | © 1999 American Physical Society (APS). This is the accepted version of the following article: Gebauer, J. & Lausmann, M. & Staab, T. E. M. & Krause-Rehberg, R. & Hakala, M. & Puska, Martti J. 1999. Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs. Physical Review B. Volume 60, Issue 3. 1464-1467. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.60.1464, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.60.1464. | en |
dc.subject.other | Physics | en |
dc.title | Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
dc.description.version | Peer reviewed | en |
dc.rights.holder | American Physical Society (APS) | |
dc.contributor.school | Perustieteiden korkeakoulu | fi |
dc.contributor.school | School of Science | en |
dc.contributor.department | Teknillisen fysiikan laitos | fi |
dc.contributor.department | Department of Applied Physics | en |
dc.subject.keyword | native vacancies | en |
dc.subject.keyword | Doppler-broadening coincidence spectroscopy | en |
dc.identifier.urn | URN:NBN:fi:aalto-201509174302 | |
dc.type.dcmitype | text | en |
dc.identifier.doi | 10.1103/physrevb.60.1464 | |
dc.type.version | Final published version | en |
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