Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

Gebauer, J.; Lausmann, M.; Staab, T. E. M.; Krause-Rehberg, R.; Hakala, M.; Puska, Martti J.

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dc.contributor	Aalto-yliopisto	fi
dc.contributor	Aalto University	en
dc.contributor.author	Gebauer, J.
dc.contributor.author	Lausmann, M.
dc.contributor.author	Staab, T. E. M.
dc.contributor.author	Krause-Rehberg, R.
dc.contributor.author	Hakala, M.
dc.contributor.author	Puska, Martti J.
dc.date.accessioned	2015-09-18T09:01:59Z
dc.date.available	2015-09-18T09:01:59Z
dc.date.issued	1999
dc.identifier.citation	Gebauer, J. & Lausmann, M. & Staab, T. E. M. & Krause-Rehberg, R. & Hakala, M. & Puska, Martti J. 1999. Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs. Physical Review B. Volume 60, Issue 3. 1464-1467. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.60.1464.	en
dc.identifier.issn	1550-235X (electronic)
dc.identifier.uri	https://aaltodoc.aalto.fi/handle/123456789/17807
dc.description.abstract	Native vacancies in Te-doped (5×1016–5×1018cm−3) GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.	en
dc.format.extent	1464-1467
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	American Physical Society (APS)	en
dc.relation.ispartofseries	Physical Review B	en
dc.relation.ispartofseries	Volume 60, Issue 3
dc.rights	© 1999 American Physical Society (APS). This is the accepted version of the following article: Gebauer, J. & Lausmann, M. & Staab, T. E. M. & Krause-Rehberg, R. & Hakala, M. & Puska, Martti J. 1999. Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs. Physical Review B. Volume 60, Issue 3. 1464-1467. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.60.1464, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.60.1464.	en
dc.subject.other	Physics	en
dc.title	Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs	en
dc.type	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä	fi
dc.description.version	Peer reviewed	en
dc.rights.holder	American Physical Society (APS)
dc.contributor.school	Perustieteiden korkeakoulu	fi
dc.contributor.school	School of Science	en
dc.contributor.department	Teknillisen fysiikan laitos	fi
dc.contributor.department	Department of Applied Physics	en
dc.subject.keyword	native vacancies	en
dc.subject.keyword	Doppler-broadening coincidence spectroscopy	en
dc.identifier.urn	URN:NBN:fi:aalto-201509174302
dc.type.dcmitype	text	en
dc.identifier.doi	10.1103/physrevb.60.1464
dc.type.version	Final published version	en

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