Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

 |  Login

Show simple item record

dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Gebauer, J.
dc.contributor.author Lausmann, M.
dc.contributor.author Staab, T. E. M.
dc.contributor.author Krause-Rehberg, R.
dc.contributor.author Hakala, M.
dc.contributor.author Puska, Martti J.
dc.date.accessioned 2015-09-18T09:01:59Z
dc.date.available 2015-09-18T09:01:59Z
dc.date.issued 1999
dc.identifier.citation Gebauer, J. & Lausmann, M. & Staab, T. E. M. & Krause-Rehberg, R. & Hakala, M. & Puska, Martti J. 1999. Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs. Physical Review B. Volume 60, Issue 3. 1464-1467. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.60.1464. en
dc.identifier.issn 1550-235X (electronic)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17807
dc.description.abstract Native vacancies in Te-doped (5×1016–5×1018cm−3) GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation. en
dc.format.extent 1464-1467
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society (APS) en
dc.relation.ispartofseries Physical Review B en
dc.relation.ispartofseries Volume 60, Issue 3
dc.rights © 1999 American Physical Society (APS). This is the accepted version of the following article: Gebauer, J. & Lausmann, M. & Staab, T. E. M. & Krause-Rehberg, R. & Hakala, M. & Puska, Martti J. 1999. Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs. Physical Review B. Volume 60, Issue 3. 1464-1467. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.60.1464, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.60.1464. en
dc.subject.other Physics en
dc.title Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Physical Society (APS)
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword native vacancies en
dc.subject.keyword Doppler-broadening coincidence spectroscopy en
dc.identifier.urn URN:NBN:fi:aalto-201509174302
dc.type.dcmitype text en
dc.identifier.doi 10.1103/physrevb.60.1464
dc.type.version Final published version en


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search archive


Advanced Search

article-iconSubmit a publication

Browse