Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

Gebauer, J.; Lausmann, M.; Staab, T. E. M.; Krause-Rehberg, R.; Hakala, M.; Puska, Martti J.

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Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

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Title:	Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs
Author(s):	Gebauer, J. ; Lausmann, M. ; Staab, T. E. M. ; Krause-Rehberg, R. ; Hakala, M. ; Puska, Martti J.
Date:	1999
Language:	en
Pages:	1464-1467
Department:	Teknillisen fysiikan laitos Department of Applied Physics
Series:	Physical Review B, Volume 60, Issue 3
ISSN:	1550-235X (electronic)
DOI-number:	10.1103/physrevb.60.1464
Subject:	Physics
Keywords:	native vacancies, Doppler-broadening coincidence spectroscopy
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Citation: Gebauer, J. & Lausmann, M. & Staab, T. E. M. & Krause-Rehberg, R. & Hakala, M. & Puska, Martti J. 1999. Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs. Physical Review B. Volume 60, Issue 3. 1464-1467. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.60.1464.
Abstract: Native vacancies in Te-doped (5×1016–5×1018cm−3) GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.
Rights: © 1999 American Physical Society (APS). This is the accepted version of the following article: Gebauer, J. & Lausmann, M. & Staab, T. E. M. & Krause-Rehberg, R. & Hakala, M. & Puska, Martti J. 1999. Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs. Physical Review B. Volume 60, Issue 3. 1464-1467. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.60.1464, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.60.1464.
Permanent link to this item: http://urn.fi/URN:NBN:fi:aalto-201509174302 Email this Export to RefWorks QR Code Print BibTex Tweet

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