Void formation in Cu-Sn Micro-Connects

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.advisor Vuorinen, Vesa
dc.contributor.author Ross, Glenn
dc.date.accessioned 2015-09-18T08:25:50Z
dc.date.available 2015-09-18T08:25:50Z
dc.date.issued 2015-08-24
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17699
dc.description.abstract The implementation of micro-connects is the next evolutionary step in fabricating high density integrated circuits (IC) and microelectromechanical systems (MEMS). The shift to micro-connects as an interconnect technology not only substantially enhances the packaging density of ICs but also improves performance. As attractive as this technology sounds, there are significant reliability challenges which need to be overcome. The interfacial voiding of Cu-Sn micro-connects is one such challenge and is the focus of this thesis work. Voiding has been identified as a challenge due to the negative impact on the mechanical and electrical performance of interconnections. As micro-connects have very small feature sizes, the impact of interfacial voiding on reliability is more significant. Previous studies have identified electroplated Cu as a common source of voiding. Additionally electroplating parameters affect the propensity of an interface to exhibit voiding. Voids observed in a Cu-Sn micro-connect are located within the intermetallic compound (IMC) of Cu3Sn or at the interface of Cu and Cu3Sn. A review of the published literature leads to a common scientific consensus that voids exhibiting this behaviour are Kirkendall voids. Kirkendall voids form due to the imbalance of atomic flux during solid state diffusion. As will be discussed, despite the fact that diffusion appears to be a driving force for void formation, this alone cannot be the only factor in void formation. This work will systematically study the average void density and size as a function of thermal annealing. Samples will be prepared using a range of electroplating parameters, including electroplating chemistries and current densities. Additionally, the impact of voids on the diffusion mechanisms and the IMC growth rates will be presented. The motivation of this work is to present quantitative data which can be used for both an understanding of electroplating parameters on the voiding propensity, and for the reliability impacts of voids on micro-connects. en
dc.format.extent 6 + 84
dc.language.iso en en
dc.title Void formation in Cu-Sn Micro-Connects en
dc.type G2 Pro gradu, diplomityö en
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.subject.keyword micro-connects en
dc.subject.keyword voiding en
dc.subject.keyword reliability en
dc.subject.keyword electroplating en
dc.subject.keyword impurities en
dc.subject.keyword diffusion en
dc.identifier.urn URN:NBN:fi:aalto-201509184314
dc.programme.major Master's Programme in Micro and Nanotechnology fi
dc.programme.mcode S3010 fi
dc.type.ontasot Master's thesis en
dc.type.ontasot Diplomityö fi
dc.contributor.supervisor Paulasto-Kröckel, Mervi
dc.programme EST - Master’s Programme in Micro and Nanotechnology (TS2005) fi
dc.location P1 fi


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