Facet Growth of 4He Crystals at mK Temperatures

Ruutu, J. P.; Hakonen, Pertti J.; Babkin, A. V.; Parshin, A. Ya.; Penttilä, J. S.; Saramäki, J. P.; Tvalashvili, G.

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Facet Growth of 4He Crystals at mK Temperatures

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Title:	Facet Growth of 4He Crystals at mK Temperatures
Author(s):	Ruutu, J. P. ; Hakonen, Pertti J. ; Babkin, A. V. ; Parshin, A. Ya. ; Penttilä, J. S. ; Saramäki, J. P. ; Tvalashvili, G.
Date:	1996
Language:	en
Pages:	4187-4190
Department:	Teknillisen fysiikan laitos Department of Applied Physics
Series:	Physical Review Letters, Volume 76, Issue 22
ISSN:	0031-9007 (printed)
DOI-number:	10.1103/physrevlett.76.4187
Subject:	Physics
Keywords:	solid 4He, facet, interferometry
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Citation: Ruutu, J. P. & Hakonen, Pertti J. & Babkin, A. V. & Parshin, A. Ya. & Penttilä, J. S. & Saramäki, J. P. & Tvalashvili, G. 1996. Facet Growth of 4He Crystals at mK Temperatures. Physical Review Letters. Volume 76, Issue 22. 4187-4190. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.76.4187
Abstract: We have investigated growth of c facets in good quality helium crystals with screw dislocation densities 0–20 cm exp −2 along the c axis. Three distinct regimes of growth were observed. One of them can be explained by spiral growth provided that kinetic energy of moving steps and their tendency to localization at large driving forces are taken into account. In the absence of screw dislocations we find burstlike growth unless the speed is less than 0.5 nm/s, in which case anomalous, intrinsic growth of facets is detected.
Rights: © 1996 American Physical Society (APS). This is the accepted version of the following article: Ruutu, J. P. & Hakonen, Pertti J. & Babkin, A. V. & Parshin, A. Ya. & Penttilä, J. S. & Saramäki, J. P. & Tvalashvili, G. 1996. Facet Growth of 4He Crystals at mK Temperatures. Physical Review Letters. Volume 76, Issue 22. 4187-4190. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.76.4187, which has been published in final form at http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.76.4187.
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