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Vacancy defect distributions in bulk ZnO crystals

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Tuomisto, Filip
dc.contributor.author Look, David C.
dc.date.accessioned 2015-09-04T10:12:55Z
dc.date.available 2015-09-04T10:12:55Z
dc.date.issued 2007
dc.identifier.citation Tuomisto, Filip & Look, David C. 2007. Vacancy defect distributions in bulk ZnO crystals. Zinc Oxide Materials and Devices II. Proceedings of SPIE. 6474. 647413/1-11. ISSN 0277-786X (printed). ISBN 978-0-8194-6587-0 (printed). DOI: 10.1117/12.698902 en
dc.identifier.isbn 978-0-8194-6587-0 (printed)
dc.identifier.issn 0277-786X (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17582
dc.description.abstract We have used positron annihilation spectroscopy to study vacancy defects in ZnO single crystals grown by various methods from both commercial and academic sources. The combination of positron lifetime and Doppler broadening techniques with theoretical calculations provides the means to deduce both the identities and the concentrations of the vacancies. The annihilation characteristics of the Zn and O vacancies have been determined by studying electron-irradiated ZnO grown by the seeded vapor phase technique. The different ZnO samples were grown with the following techniques: the hydrothermal growth method, the seeded vapor phase technique, growth from melt (skull melting technique), and both conventional and contactless chemical vapor transport. We present a comparison of the vacancydefects and their concentrations in these materials. en
dc.format.extent 647413/1-11
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher SPIE-Society of Photo Optical Instrumentation Engineers en
dc.relation.ispartof Zinc Oxide Materials and Devices II en
dc.relation.ispartofseries Proceedings of SPIE en
dc.relation.ispartofseries 6474
dc.rights © 2007 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. en
dc.subject.other Physics en
dc.title Vacancy defect distributions in bulk ZnO crystals en
dc.type A4 Artikkeli konferenssijulkaisussa fi
dc.description.version Peer reviewed en
dc.rights.holder Society of Photo Optical Instrumentation Engineers (SPIE)
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword ZnO en
dc.subject.keyword vacancy en
dc.subject.keyword positron annihilation en
dc.subject.keyword single crystal en
dc.identifier.urn URN:NBN:fi:aalto-201509024199
dc.type.dcmitype text en
dc.identifier.doi 10.1117/12.698902
dc.type.version Final published version en

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