Mechanisms of electrical isolation in O+-irradiated ZnO

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Zubiaga, A.
dc.contributor.author Tuomisto, Filip
dc.contributor.author Coleman, V. A.
dc.contributor.author Tan, H. H.
dc.contributor.author Jagadish, C.
dc.contributor.author Koike, K.
dc.contributor.author Sasa, S.
dc.contributor.author Inoue, M.
dc.contributor.author Yano, M.
dc.date.accessioned 2015-09-01T09:01:45Z
dc.date.available 2015-09-01T09:01:45Z
dc.date.issued 2008
dc.identifier.citation Zubiaga, A. & Tuomisto, Filip & Coleman, V. A. & Tan, H. H. & Jagadish, C. & Koike, K. & Sasa, S. & Inoue, M. & Yano, M. 2008. Mechanisms of electrical isolation in O+-irradiated ZnO. Physical Review B. Volume 78, Issue 3. 035125/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.78.035125 en
dc.identifier.issn 1098-0121 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17544
dc.description.abstract We have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are produced in the irradiation at a relatively low rate of about 2000 cm exp −1 when the ion fluence is at most 10 exp 15 cm exp −2 and that vacancy clusters are created at higher fluences. The Zn vacancies introduced in the irradiation act as dominant compensating centers and cause the electrical isolation, while the results suggest that the vacancy clusters are electrically inactive. en
dc.format.extent 035125/1-5
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society (APS) en
dc.relation.ispartofseries Physical Review B en
dc.relation.ispartofseries Volume 78, Issue 3
dc.rights © 2008 American Physical Society (APS). This is the accepted version of the following article: Zubiaga, A. & Tuomisto, Filip & Coleman, V. A. & Tan, H. H. & Jagadish, C. & Koike, K. & Sasa, S. & Inoue, M. & Yano, M. 2008. Mechanisms of electrical isolation in O+-irradiated ZnO. Physical Review B. Volume 78, Issue 3. 035125/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.78.035125, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.78.035125 en
dc.subject.other Physics en
dc.title Mechanisms of electrical isolation in O+-irradiated ZnO en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Physical Society (APS)
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword ZnO en
dc.subject.keyword irradiation en
dc.subject.keyword positrons en
dc.identifier.urn URN:NBN:fi:aalto-201509014164
dc.type.dcmitype text en
dc.identifier.doi 10.1103/physrevb.78.035125
dc.type.version Final published version en


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