Evolution of vacancy-related defects upon annealing of ion-implanted germanium
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Journal Title
Journal ISSN
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2008
Major/Subject
Mcode
Degree programme
Language
en
Pages
085202/1-5
Series
Physical Review B, Volume 78, Issue 8
Abstract
Positron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×10 exp 12 cm exp−2 and 4×10 exp 14 cm exp−2. Ion channeling measurements on as-implanted samples show considerable lattice damage at a fluence of 1×10 exp 13 cm exp −2 and a fluence of 1×10 exp 14 cm exp -2 was enough to amorphize the samples. Positron experiments reveal that the average free volume in as-irradiated samples is of divacancy size. Larger vacancy clusters are formed during regrowth of the damaged layers when the samples are annealed in the temperature range 200–400 °C. Evolution of the vacancy-related defects upon annealing depends noticeably on fluence of ion implantation and for the highest fluences also on ion species.Description
Keywords
Ge, ion implantation, positrons
Other note
Citation
Slotte, J. & Rummukainen, M. & Tuomisto, Filip & Markevich, V. P. & Peaker, A. R. & Jeynes, C. & Gwilliam, R. M. 2008. Evolution of vacancy-related defects upon annealing of ion-implanted germanium. Phys. Rev. B. Volume 78, Issue 8. 085202/1-5. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.78.085202
