Tracking defect-induced ferromagnetism in GaN:Gd

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Roever, Martin
dc.contributor.author Malindretos, Joerg
dc.contributor.author Bedoya-Pinto, Amilcar
dc.contributor.author Rizzi, Angela
dc.contributor.author Rauch, Christian
dc.contributor.author Tuomisto, Filip
dc.date.accessioned 2015-08-27T09:01:26Z
dc.date.available 2015-08-27T09:01:26Z
dc.date.issued 2011
dc.identifier.citation Roever, Martin & Malindretos, Joerg & Bedoya-Pinto, Amilcar & Rizzi, Angela & Rauch, Christian & Tuomisto, Filip. 2011. Tracking defect-induced ferromagnetism in GaN:Gd. Physical Review B. Volume 84, Issue 8. 081201/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.84.081201 en
dc.identifier.issn 1098-0121 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17509
dc.description.abstract We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 10 exp 19 cm exp −3 might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support a direct connection between the ferromagnetism and the Ga vacancy in GaN:Gd. Oxygen codoping of GaN:Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd-doped GaN. en
dc.format.extent 081201/1-4
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society (APS) en
dc.relation.ispartofseries Physical Review B en
dc.relation.ispartofseries Volume 84, Issue 8
dc.rights © 2011 American Physical Society (APS). This is the accepted version of the following article: Roever, Martin & Malindretos, Joerg & Bedoya-Pinto, Amilcar & Rizzi, Angela & Rauch, Christian & Tuomisto, Filip. 2011. Tracking defect-induced ferromagnetism in GaN:Gd. Physical Review B. Volume 84, Issue 8. 081201/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.84.081201, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.84.081201. en
dc.subject.other Physics en
dc.title Tracking defect-induced ferromagnetism in GaN:Gd en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Physical Society (APS)
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword GaN en
dc.subject.keyword ferromagnetism en
dc.subject.keyword defects en
dc.identifier.urn URN:NBN:fi:aalto-201508264126
dc.type.dcmitype text en
dc.identifier.doi 10.1103/physrevb.84.081201
dc.type.version Final published version en


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