Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Tuomisto, Filip
dc.contributor.author Saarinen, K.
dc.contributor.author Paskova, T.
dc.contributor.author Monemar, B.
dc.contributor.author Bockowski, M.
dc.contributor.author Suski, T.
dc.date.accessioned 2015-08-26T09:01:26Z
dc.date.available 2015-08-26T09:01:26Z
dc.date.issued 2006
dc.identifier.citation Tuomisto, Filip & Saarinen, K. & Paskova, T. & Monemar, B. & Bockowski, M. & Suski, T. 2006. Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy. Journal of Applied Physics. Volume 99, Issue 6. 066105/1-3. ISSN 0021-8979 (printed). DOI: 10.1063/1.2180450 en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17498
dc.description.abstract We have used positron annihilation spectroscopy to study the thermal behavior of different native vacancy defects typical of freestanding GaN grown by hydride vapor phase epitaxy under high pressure annealing at different annealing temperatures. The results show that the VGa‐ON pairs dissociate and the Ga vacancies anneal out from the bulk of the material at temperatures 1500–1700K. A binding energy of Eb=1.6(4)eV can be determined for the pair. Thermal formation of Ga vacancies is observed at the annealing temperatures above 1700K, indicating that Ga vacancies are created thermally at the high growth temperature, but their ability to form complexes such as VGa‐ON determines the fraction of vacancy defects surviving the cooling down. The formation energy of the isolated Ga vacancy is experimentally determined. en
dc.format.extent 066105/1-3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 99, Issue 6
dc.rights © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 99, Issue 6 and may be found at http://scitation.aip.org/content/aip/journal/jap/99/6/10.1063/1.2180450. en
dc.subject.other Physics en
dc.title Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder AIP Publishing
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword GaN en
dc.subject.keyword vacancy defects en
dc.subject.keyword thermal stability en
dc.identifier.urn URN:NBN:fi:aalto-201508254113
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.2180450
dc.type.version Final published version en


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