On the interplay of point defects and Cd in non-polar ZnCdO films

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Zubiaga, A.
dc.contributor.author Reurings, F.
dc.contributor.author Tuomisto, Filip
dc.contributor.author Plazaola, F.
dc.contributor.author Garcia, J. A.
dc.contributor.author Kuznetsov, A. Yu.
dc.contributor.author Egger, W.
dc.contributor.author Zuniga-Perez, J.
dc.contributor.author Munoz-Sanjose, V.
dc.date.accessioned 2015-08-19T09:01:55Z
dc.date.available 2015-08-19T09:01:55Z
dc.date.issued 2013
dc.identifier.citation Zubiaga, A. & Reurings, F. & Tuomisto, Filip & Plazaola, F. & Garcia, J. A. & Kuznetsov, A. Yu. & Egger, W. & Zuniga-Perez, J. & Munoz-Sanjose, V. 2013. On the interplay of point defects and Cd in non-polar ZnCdO films. Journal of Applied Physics. Volume 113, Issue 2. 023512/1-7. ISSN 0021-8979 (printed). DOI: 10.1063/1.4775396 en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17489
dc.description.abstract Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling by secondary ion mass spectroscopy and Rutherford back-scattering. Vacancy clusters and Zn vacancies with concentrations up to 10exp17 cm−3 and 10exp18 cm−3, respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 μm inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional CdZn in the ZnO crystal. en
dc.format.extent 023512/1-7
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 113, Issue 2
dc.rights © 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 113, Issue 2 and may be found at http://scitation.aip.org/content/aip/journal/jap/113/2/10.1063/1.4775396. en
dc.subject.other Physics en
dc.title On the interplay of point defects and Cd in non-polar ZnCdO films en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder AIP Publishing
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword ZnCdO en
dc.subject.keyword point defects en
dc.subject.keyword positron annihilation spectroscopy en
dc.subject.keyword secondary ion mass spectrometry en
dc.identifier.urn URN:NBN:fi:aalto-201508184107
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.4775396
dc.type.version Final published version en

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