Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN
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Journal Title
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2005
Major/Subject
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Degree programme
Language
en
Pages
031915/1-3
Series
Applied Physics Letters, Volume 86, Issue 3
Abstract
We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga vacancies. Vacancy clusters with a positron lifetime τD=470±50 ps were found near the N polar surfaces of both the HVPE GaN layers and bulk crystals.Description
Keywords
GaN, polarity, vacancies, impurity, cluster
Other note
Citation
Tuomisto, Filip & Saarinen, K. & Lucznik, B. & Grzegory, I. & Teisseyre, H. & Suski, T. & Porowski, S. & Hageman, P. R. & Likonen, J. 2005. Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN. Applied Physics Letters. Volume 86, Issue 3. 031915/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.1854745
