Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Tengborn, E.
dc.contributor.author Rummukainen, M.
dc.contributor.author Tuomisto, Filip
dc.contributor.author Saarinen, K.
dc.contributor.author Rudzinski, M.
dc.contributor.author Hageman, P. R.
dc.contributor.author Larsen, P. K.
dc.contributor.author Nordlund, A.
dc.date.accessioned 2015-08-19T09:01:17Z
dc.date.available 2015-08-19T09:01:17Z
dc.date.issued 2006
dc.identifier.citation Tengborn, E. & Rummukainen, M. & Tuomisto, Filip & Saarinen, K. & Rudzinski, M. & Hageman, P. R. & Larsen, P. K. & Nordlund, A. 2006. Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition. Applied Physics Letters. Volume 89, Issue 9. 091905/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2338887 en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17481
dc.description.abstract Positron annihilation spectroscopy has been used to study GaN grown by metal-organic chemical vapor deposition on misoriented 4H-SiC substrates. Two kinds of vacancy defects are observed: Ga vacancies and larger vacancy clusters in all the studied layers. In addition to vacancies, positrons annihilate at shallow traps that are likely to be dislocations. The results show that the vacancy concentration increases and the shallow positron trap concentration decreases with the increasing substrate misorientation. en
dc.format.extent 091905/1-3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 89, Issue 9
dc.rights © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 89, Issue 9 and may be found at http://scitation.aip.org/content/aip/journal/apl/89/9/10.1063/1.2338887. en
dc.subject.other Physics en
dc.title Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder AIP Publishing
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword GaN en
dc.subject.keyword misoriented en
dc.subject.keyword vacancies en
dc.subject.keyword positrons en
dc.subject.keyword annihilation en
dc.identifier.urn URN:NBN:fi:aalto-201508184099
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.2338887
dc.type.version Final published version en


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