Citation:
Tengborn, E. & Rummukainen, M. & Tuomisto, Filip & Saarinen, K. & Rudzinski, M. & Hageman, P. R. & Larsen, P. K. & Nordlund, A. 2006. Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition. Applied Physics Letters. Volume 89, Issue 9. 091905/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2338887
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