Positron trapping in semiconductors

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Puska, Martti J.
dc.contributor.author Corbel, C.
dc.contributor.author Nieminen, Risto M.
dc.date.accessioned 2015-08-18T09:02:10Z
dc.date.available 2015-08-18T09:02:10Z
dc.date.issued 1990
dc.identifier.citation Puska, M. J. & Corbel, C. & Nieminen, Risto M. 1990. Positron trapping in semiconductors. Physical Review B. Volume 41, Issue 14. 9980-9993. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.41.9980. en
dc.identifier.issn 1550-235X (electronic)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17467
dc.description.abstract Positron trapping into vacancies in semiconductors is studied on the basis of Fermi’s golden-rule calculations. The emphasis is put on the comparison of the trapping properties into defects in different charge states. In particular, the temperature dependences are investigated. Important features for vacancy-type defects in semiconductors are the localized electron states within the forbidden energy gap and (in the case of negatively charged defects) the weakly bound Rydberg states for positrons. Compared to vacancy-type defects in metals, these features make possible new kinds of trapping mechanisms with electron-hole and phonon excitations. For charged defects the Coulomb wave character of the delocalized positron states before trapping determines the amplitude of the wave function at the defect and thereby strongly affects the magnitude of the trapping rate. As a result, trapping into positively charged defects is effectively forbidden while negatively charged defects show remarkable properties which differ from the picture established for positron trapping in metals. The trapping rate into negative defects increases strongly with decreasing temperature and at very low temperatures ‘‘gigantic’’ values may result en
dc.format.extent 9980-9993
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society (APS) en
dc.relation.ispartofseries Physical Review B en
dc.relation.ispartofseries Volume 41, Issue 14
dc.rights © 1990 American Physical Society (APS). This is the accepted version of the following article: Puska, M. J. & Corbel, C. & Nieminen, Risto M. 1990. Positron trapping in semiconductors. Physical Review B. Volume 41, Issue 14. 9980-9993. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.41.9980, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.41.9980. en
dc.subject.other Physics en
dc.title Positron trapping in semiconductors en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Physical Society (APS)
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Department of Applied Physics en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.subject.keyword positron annihilation en
dc.subject.keyword semiconductors en
dc.subject.keyword defects en
dc.subject.keyword electronic structure calculation en
dc.identifier.urn URN:NBN:fi:aalto-201508174085
dc.type.dcmitype text en
dc.identifier.doi 10.1103/physrevb.41.9980
dc.type.version Final published version en


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