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Point defect balance in epitaxial GaSb

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Segercrantz, N.
dc.contributor.author Slotte, J.
dc.contributor.author Makkonen, I.
dc.contributor.author Kujala, J.
dc.contributor.author Tuomisto, Filip
dc.contributor.author Song, Y.
dc.contributor.author Wang, S.
dc.date.accessioned 2015-08-18T09:01:34Z
dc.date.available 2015-08-18T09:01:34Z
dc.date.issued 2014
dc.identifier.citation Segercrantz, N. & Slotte, J. & Makkonen, I. & Kujala, J. & Tuomisto, Filip & Song, Y. & Wang, S. 2014. Point defect balance in epitaxial GaSb. Applied Physics Letters. Volume 105, Issue 8. 082113/1-4. ISSN 0003-6951 (printed). DOI: 10.1063/1.4894473 en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17459
dc.description.abstract Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods. en
dc.format.extent 082113/1-4
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 105, Issue 8
dc.rights © 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 105, Issue 8 and may be found at http://scitation.aip.org/content/aip/journal/apl/105/8/10.1063/1.4894473. en
dc.subject.other Physics en
dc.title Point defect balance in epitaxial GaSb en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder AIP Publishing
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword positrons en
dc.subject.keyword GaSb en
dc.subject.keyword defects en
dc.identifier.urn URN:NBN:fi:aalto-201508174077
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.4894473
dc.type.version Final published version en

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