Point defect balance in epitaxial GaSb
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Journal Title
Journal ISSN
Volume Title
School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2014
Major/Subject
Mcode
Degree programme
Language
en
Pages
082113/1-4
Series
Applied Physics Letters, Volume 105, Issue 8
Abstract
Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.Description
Keywords
positrons, GaSb, defects
Other note
Citation
Segercrantz, N. & Slotte, J. & Makkonen, I. & Kujala, J. & Tuomisto, Filip & Song, Y. & Wang, S. 2014. Point defect balance in epitaxial GaSb. Applied Physics Letters. Volume 105, Issue 8. 082113/1-4. ISSN 0003-6951 (printed). DOI: 10.1063/1.4894473
