Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Hynninen, Teemu
dc.contributor.author Gosálvez, Miguel A.
dc.contributor.author Foster, Adam S.
dc.contributor.author Tanaka, Hiroshi
dc.contributor.author Sato, Kazuo
dc.contributor.author Uwaha, Makio
dc.contributor.author Nieminen, Risto M.
dc.date.accessioned 2015-08-13T09:01:33Z
dc.date.available 2015-08-13T09:01:33Z
dc.date.issued 2008
dc.identifier.citation Hynninen, Teemu & Gosálvez, Miguel A. & Foster, Adam S. & Tanaka, Hiroshi & Sato, Kazuo & Uwaha, Makio & Nieminen, Risto M.. 2008. Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks. New Journal of Physics. Volume 10, Issue 1. 013033/1-19. ISSN 1367-2630 (printed). DOI: 10.1088/1367-2630/10/1/013033. en
dc.identifier.issn 1367-2630 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17417
dc.description.abstract We simulate the formation of experimentally observed trapezoidal hillocks on etched Si(110) surfaces, describing their generic geometrical shape and analyzing the relative stability and/or reactivity of the key surface sites. In our model, the hillocks are stabilized by Cu impurities in the etchant adsorbing on the surface and acting as pinning agents. A model of random adsorptions will not result in hillock formation since a single impurity is easily removed from the surface. Instead a whole cluster of Cu atoms is needed as a mask to stabilize a hillock. Therefore we propose and analyze mechanisms that drive correlated adsorptions and lead to stable Cu clusters. en
dc.format.extent 013033/1-19
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.relation.ispartofseries New Journal of Physics en
dc.relation.ispartofseries Volume 10, Issue 1
dc.rights © 2008 IOP Publishing. This is the accepted version of the following article: Hynninen, Teemu & Gosálvez, Miguel A. & Foster, Adam S. & Tanaka, Hiroshi & Sato, Kazuo & Uwaha, Makio & Nieminen, Risto M.. 2008. Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks. New Journal of Physics. Volume 10, Issue 1. 013033/1-19. ISSN 1367-2630 (printed). DOI: 10.1088/1367-2630/10/1/013033, which has been published in final form at http://iopscience.iop.org/1367-2630/10/1/013033. This work is distributed under the Creative Commons Attribution 3.0 License (https://creativecommons.org/licenses/by/3.0/). en
dc.subject.other Physics en
dc.title Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder IOP Publishing
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword etching en
dc.subject.keyword silicon en
dc.subject.keyword hillocks en
dc.subject.keyword surface morphology en
dc.subject.keyword Cu clusters en
dc.identifier.urn URN:NBN:fi:aalto-201508124026
dc.type.dcmitype text en
dc.identifier.doi 10.1088/1367-2630/10/1/013033
dc.type.version Final published version en


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