Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon

 |  Login

Show simple item record

dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Vähänissi, Ville
dc.contributor.author Yli-Koski, Marko
dc.contributor.author Haarahiltunen, Antti
dc.contributor.author Talvitie, Heli
dc.contributor.author Bao, Yameng
dc.contributor.author Savin, Hele
dc.date.accessioned 2015-08-10T09:00:56Z
dc.date.available 2015-08-10T09:00:56Z
dc.date.issued 2013
dc.identifier.citation Vähänissi, Ville & Yli-Koski, Marko & Haarahiltunen, Antti & Talvitie, Heli & Bao, Yameng & Savin, Hele. 2013. Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon. Solar Energy Materials and Solar Cells. Volume 114. 54-58. ISSN 0927-0248 (printed). DOI: 10.1016/j.solmat.2013.02.026. en
dc.identifier.issn 0927-0248 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17339
dc.description.abstract We have carried out experiments on both boron diffusion gettering (BDG) and phosphorus diffusion gettering (PDG) in n-type multicrystalline silicon. We have focused our research on the highly contaminated edge areas of the silicon ingot often referred to as the red zone. Due to poor carrier lifetime attributed to these areas, they induce a significant material loss in solar cell manufacturing. In our experiments, the red zone was found to disappear after a specific BDG treatment and a lifetime improvement from 5 μs up to 670 μs was achieved. Outside the red zone, lifetimes even up to 850 μs were measured after gettering. Against the common hypothesis, we found higher dopant in-diffusion temperature beneficial both for the red zone and the good grains making BDG more efficient than PDG. To explain the results we suggest that high temperature leads to more complete dissolution of metal precipitates, which enhances the diffusion gettering to the emitter. en
dc.format.extent 54-58
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Elsevier BV en
dc.relation.ispartofseries Solar Energy Materials and Solar Cells en
dc.relation.ispartofseries Volume 114
dc.rights © 2013 Elsevier BV. This is the post print version of the following article: Vähänissi, Ville & Yli-Koski, Marko & Haarahiltunen, Antti & Talvitie, Heli & Bao, Yameng & Savin, Hele. 2013. Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon. Solar Energy Materials and Solar Cells. Volume 114. 54-58. ISSN 0927-0248 (printed). DOI: 10.1016/j.solmat.2013.02.026, which has been published in final form at http://www.sciencedirect.com/science/article/pii/S0927024813000974. en
dc.subject.other Physics en
dc.title Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder Elsevier BV
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.contributor.department Department of Micro and Nanosciences en
dc.subject.keyword n-type mc-Si en
dc.subject.keyword lifetime en
dc.subject.keyword gettering en
dc.subject.keyword red zone en
dc.identifier.urn URN:NBN:fi:aalto-201506013063
dc.type.dcmitype text en
dc.identifier.doi 10.1016/j.solmat.2013.02.026
dc.type.version Post print en


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search archive


Advanced Search

article-iconSubmit a publication

Browse

My Account