Band offsets at the GaInP/GaAs heterojunction

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Lindell, A.
dc.contributor.author Pessa, M.
dc.contributor.author Salokatve, A.
dc.contributor.author Bernardini, F.
dc.contributor.author Nieminen, Risto M.
dc.contributor.author Paalanen, M.
dc.date.accessioned 2015-07-27T09:01:08Z
dc.date.available 2015-07-27T09:01:08Z
dc.date.issued 1997
dc.identifier.citation Lindell, A. & Pessa, M. & Salokatve, A. & Bernardini, F. & Nieminen, Risto M. & Paalanen, M. 1997. Band offsets at the GaInP/GaAs heterojunction. Journal of Applied Physics. Volume 82, Issue 7. 3374-3380. ISSN 0021-8979 (printed). DOI: 10.1063/1.365650. en
dc.identifier.issn 0021-8979 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/17253
dc.description.abstract We have measured current–voltage curves and the temperature dependence of the zero bias conductance for a p -type Be-doped GaInP/GaAs heterojunction grown by the molecular beam epitaxy method. We have determined the valence band offset ΔEν from both measurements and find it to be 310 meV within 5% of accuracy. Similarly, we find for an n -type Si-doped sample that the conduction band offset ΔEC is 95 meV. First-principles calculations have been carried out for the atomic and electronic structures of the interfaces. For the thermodynamically favored interfaces, the valence band offset is found not to be sensitive to atomic relaxations at the interface. The calculated values are in good agreement with the experiments. en
dc.format.extent 3374-3380
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Journal of Applied Physics en
dc.relation.ispartofseries Volume 82, Issue 7
dc.rights © 1997 American Institute of Physics. This is the accepted version of the following article: Lindell, A. & Pessa, M. & Salokatve, A. & Bernardini, F. & Nieminen, Risto M. & Paalanen, M. 1997. Band offsets at the GaInP/GaAs heterojunction. Journal of Applied Physics. Volume 82, Issue 7. 3374-3380. ISSN 0021-8979 (printed). DOI: 10.1063/1.365650, which has been published in final form at http://scitation.aip.org/content/aip/journal/jap/82/7/10.1063/1.365650. en
dc.subject.other Physics en
dc.title Band offsets at the GaInP/GaAs heterojunction en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword interface thermodynamics en
dc.subject.keyword heterojunctions en
dc.subject.keyword valence bands en
dc.identifier.urn URN:NBN:fi:aalto-201507273882
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.365650
dc.type.version Final published version en


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