Comment on 'Paired Gap States in a Semiconducting Carbon Nanotube: Deep and Shallow Levels'

Krasheninnikov, A. V.; Foster, Adam S.; Nieminen, Risto M.

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Comment on 'Paired Gap States in a Semiconducting Carbon Nanotube: Deep and Shallow Levels'

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Title:	Comment on 'Paired Gap States in a Semiconducting Carbon Nanotube: Deep and Shallow Levels'
Author(s):	Krasheninnikov, A. V. ; Foster, Adam S. ; Nieminen, Risto M.
Date:	2007
Language:	en
Pages:	179703/1
Department:	Department of Applied Physics Teknillisen fysiikan laitos
Series:	Physical Review Letters, Volume 99, Issue 17
ISSN:	0031-9007 (printed)
DOI-number:	10.1103/physrevlett.99.179703
Subject:	Physics
Keywords:	carbon nanotubes, STM
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Citation: Krasheninnikov, A. V. & Foster, Adam S. & Nieminen, R. M.. 2007. Comment on 'Paired Gap States in a Semiconducting Carbon Nanotube: Deep and Shallow Levels'. Physical Review Letters. Volume 99, Issue 17. 179703/1. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.99.179703.
Abstract: A Comment on the Letter by Sungjun Lee et al., [Phys. Rev. Lett. 95, 166402 (2005)]. The authors of the Letter offer a Reply.
Rights: © 2007 American Physical Society (APS). This is the accepted version of the following article: Krasheninnikov, A. V. & Foster, Adam S. & Nieminen, R. M.. 2007. Comment on 'Paired Gap States in a Semiconducting Carbon Nanotube: Deep and Shallow Levels'. Physical Review Letters. Volume 99, Issue 17. 179703/1. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.99.179703, which has been published in final form at http://journals.aps.org/prl/pdf/10.1103/PhysRevLett.99.179703.
Permanent link to this item: http://urn.fi/URN:NBN:fi:aalto-201506173198 Email this Export to RefWorks QR Code Print BibTex Tweet

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