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Charge sensitivity of the inductive single-electron transistor

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Sillanpää, Mika A.
dc.contributor.author Roschier, Leif
dc.contributor.author Hakonen, Pertti J.
dc.date.accessioned 2015-06-03T09:01:25Z
dc.date.available 2015-06-03T09:01:25Z
dc.date.issued 2005
dc.identifier.citation Sillanpää, Mika A. & Roschier, Leif & Hakonen, Pertti J. 2005. Charge sensitivity of the inductive single-electron transistor. Applied Physics Letters. Volume 87, Issue 9. 092502/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2034096. en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/16511
dc.description.abstract We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillatorquantum noise. Sensitivity better than 10−6e/√Hz is possible with a high Q value ∼103, or using a superconducting quantum interference deviceamplifier. The model is compared to experiment, where charge sensitivity 3×10−5e/√Hz and bandwidth 100 MHz are achieved. en
dc.format.extent 092502/1-3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 87, Issue 9
dc.rights © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 95, Issue 1 and may be found at en
dc.subject.other Physics en
dc.title Charge sensitivity of the inductive single-electron transistor en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.contributor.department Department of Applied Physics en
dc.subject.keyword charge sensitivity en
dc.subject.keyword single-electron tansistors en
dc.subject.keyword Josephson inductance en
dc.subject.keyword Cooper-pair transistors en
dc.subject.keyword oscillators en
dc.subject.keyword quantum noise en
dc.subject.keyword amplifiers en
dc.subject.keyword tunneling en
dc.identifier.urn URN:NBN:fi:aalto-201506033079
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.2034096
dc.type.version Final published version en

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