Charge sensitivity of the inductive single-electron transistor

Sillanpää, Mika A.; Roschier, Leif; Hakonen, Pertti J.

Aaltodoc
→
6a Artikkelit / Articles
→
[article] Perustieteiden korkeakoulu / SCI
→
View Item

dc.contributor	Aalto-yliopisto	fi
dc.contributor	Aalto University	en
dc.contributor.author	Sillanpää, Mika A.
dc.contributor.author	Roschier, Leif
dc.contributor.author	Hakonen, Pertti J.
dc.date.accessioned	2015-06-03T09:01:25Z
dc.date.available	2015-06-03T09:01:25Z
dc.date.issued	2005
dc.identifier.citation	Sillanpää, Mika A. & Roschier, Leif & Hakonen, Pertti J. 2005. Charge sensitivity of the inductive single-electron transistor. Applied Physics Letters. Volume 87, Issue 9. 092502/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2034096.	en
dc.identifier.issn	0003-6951 (printed)
dc.identifier.uri	https://aaltodoc.aalto.fi/handle/123456789/16511
dc.description.abstract	We calculate the charge sensitivity of a recently demonstrated device where the Josephson inductance of a single Cooper-pair transistor is measured. We find that the intrinsic limit to detector performance is set by oscillatorquantum noise. Sensitivity better than 10−6e/√Hz is possible with a high Q value ∼103, or using a superconducting quantum interference deviceamplifier. The model is compared to experiment, where charge sensitivity 3×10−5e/√Hz and bandwidth 100 MHz are achieved.	en
dc.format.extent	092502/1-3
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	AIP Publishing	en
dc.relation.ispartofseries	Applied Physics Letters	en
dc.relation.ispartofseries	Volume 87, Issue 9
dc.rights	© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 95, Issue 1 and may be found at	en
dc.subject.other	Physics	en
dc.title	Charge sensitivity of the inductive single-electron transistor	en
dc.type	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä	fi
dc.description.version	Peer reviewed	en
dc.rights.holder	American Institute of Physics
dc.contributor.school	Perustieteiden korkeakoulu	fi
dc.contributor.school	School of Science	en
dc.contributor.department	Teknillisen fysiikan laitos	fi
dc.contributor.department	Department of Applied Physics	en
dc.subject.keyword	charge sensitivity	en
dc.subject.keyword	single-electron tansistors	en
dc.subject.keyword	Josephson inductance	en
dc.subject.keyword	Cooper-pair transistors	en
dc.subject.keyword	oscillators	en
dc.subject.keyword	quantum noise	en
dc.subject.keyword	amplifiers	en
dc.subject.keyword	tunneling	en
dc.identifier.urn	URN:NBN:fi:aalto-201506033079
dc.type.dcmitype	text	en
dc.identifier.doi	10.1063/1.2034096
dc.type.version	Final published version	en

Files in this item

Name: A1_sillanpää_mika_a_2005.pdf

Size: 845.0Kb

Format: PDF

View/Open

Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.