Citation:
Repo, Päivikki & Benick, Jan & Gastrow, Guillaume von & Vähänissi, Ville & Heinz, Friedemann D. & Schön, Jonas & Schubert, Martin C. & Savin, Hele. 2013. Passivation of black silicon boron emitters with atomic layer deposited aluminum oxide. Physica Status Solidi RRL. Volume 7, Issue 11. 950-954. DOI: 10.1002/pssr.201308096.
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Rights:© 2013 Wiley-Blackwell. This is the post print version of the following article: Repo, Päivikki & Benick, Jan & Gastrow, Guillaume von & Vähänissi, Ville & Heinz, Friedemann D. & Schön, Jonas & Schubert, Martin C. & Savin, Hele. 2013. Passivation of black silicon boron emitters with atomic layer deposited aluminum oxide. Physica Status Solidi RRL. Volume 7, Issue 11. 950-954. DOI: 10.1002/pssr.201308096, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/pssr.201308096/abstract.
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