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Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Repo, Päivikki
dc.contributor.author Haarahiltunen, Antti
dc.contributor.author Sainiemi, Lauri
dc.contributor.author Yli-Koski, Marko
dc.contributor.author Talvitie, Heli
dc.contributor.author Schubert, Martin C.
dc.contributor.author Savin, Hele
dc.date.accessioned 2015-06-02T09:00:56Z
dc.date.available 2015-06-02T09:00:56Z
dc.date.issued 2013
dc.identifier.citation Repo, Päivikki & Haarahiltunen, Antti & Sainiemi, Lauri & Yli-Koski, Marko & Talvitie, Heli & Schubert, Martin C. & Savin, Hele. 2013. Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition. IEEE Journal of Photovoltaics. Volume 3, Issue 1. 90-94. ISSN 2156-3381 (printed). DOI: 10.1109/jphotov.2012.2210031. en
dc.identifier.issn 2156-3381 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/16403
dc.description.abstract The poor charge-carrier transport properties attributed to nanostructured surfaces have been so far more detrimental for final device operation than the gain obtained from the reduced reflectance. Here, we demonstrate results that simultaneously show a huge improvement in the light absorption and in the surface passivation by applying atomic layer coating on highly absorbing silicon nanostructures. The results advance the development of photovoltaic applications, including high-efficiency solar cells or any devices, that require high-sensitivity light response. en
dc.format.extent 90-94
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical & Electronics Engineers (IEEE) en
dc.relation.ispartofseries IEEE Journal of Photovoltaics en
dc.relation.ispartofseries Volume 3, Issue 1
dc.rights © 2013 Institute of Electrical & Electronics Engineers (IEEE). Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6264075&tag=1 en
dc.subject.other Electrical engineering en
dc.subject.other Physics en
dc.title Effective Passivation of Black Silicon Surfaces by Atomic Layer Deposition en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder Institute of Electrical & Electronics Engineers (IEEE)
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.contributor.department Department of Micro and Nanosciences en
dc.subject.keyword aluminum oxide en
dc.subject.keyword atomic layer deposition en
dc.subject.keyword black silicon en
dc.subject.keyword nanostructures en
dc.identifier.urn URN:NBN:fi:aalto-201506013053
dc.type.dcmitype text en
dc.identifier.doi 10.1109/jphotov.2012.2210031
dc.type.version Post print en

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