Analysis of Different Models of Iron Precipitation in Multicrystalline Silicon

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Morishige, Ashley
dc.contributor.author Laine, Hannu
dc.contributor.author Schön, Jonas
dc.contributor.author Hofstetter, Jasmin
dc.contributor.author Haarahiltunen, Antti
dc.contributor.author Schubert, Martin
dc.contributor.author Savin, Hele
dc.contributor.author Buonassisi, Tonio
dc.date.accessioned 2015-06-01T09:00:46Z
dc.date.available 2015-06-01T09:00:46Z
dc.date.issued 2014
dc.identifier.citation Morishige, Ashley & Laine, Hannu & Schön, Jonas & Hofstetter, Jasmin & Haarahiltunen, Antti & Schubert, Martin & Savin, Hele & Buonassisi, Tonio. 2014. Analysis of Different Models of Iron Precipitation in Multicrystalline Silicon. The 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, USA, June 8-13, 2014. 3. DOI: 10.1109/pvsc.2014.6925566. en
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/16399
dc.description.abstract Simulation of solar cell processing enables inexpensive and rapid process optimization. Over the last twenty years, several models describing the distribution and behavior of iron point defects and iron-silicide precipitates have been developed and incorporated into process simulations. The goal of this work is to elucidate what physics are needed to accurately describe industry-relevant as-grown impurity and defect distributions and processing conditions by simulating different material-processing combinations with each model. This rigorous comparison helps scientists and engineers choose the appropriate level of model complexity, and consequently simulation run time, based on material characteristics and processing conditions. en
dc.format.extent 3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IEEE en
dc.relation.ispartof The 40th IEEE Photovoltaic Specialists Conference, Denver, Colorado, USA, June 8-13, 2014 en
dc.rights © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other work. en
dc.subject.other Electrical engineering en
dc.subject.other Physics en
dc.title Analysis of Different Models of Iron Precipitation in Multicrystalline Silicon en
dc.type A4 Artikkeli konferenssijulkaisussa fi
dc.description.version Peer reviewed en
dc.rights.holder IEEE
dc.contributor.school Sähkötekniikan korkeakoulu fi
dc.contributor.school School of Electrical Engineering en
dc.contributor.department Mikro- ja nanotekniikan laitos fi
dc.contributor.department Department of Micro and Nanosciences en
dc.subject.keyword solar cell processing en
dc.subject.keyword simulations en
dc.subject.keyword iron point defects en
dc.subject.keyword iron-silicide precipitates en
dc.identifier.urn URN:NBN:fi:aalto-201506013052
dc.type.dcmitype text en
dc.identifier.doi 10.1109/pvsc.2014.6925566
dc.type.version Post print en


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