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Double oxidation scheme for tunnel junction fabrication

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Holmqvist, T.
dc.contributor.author Meschke, M.
dc.contributor.author Pekola, Jukka P.
dc.date.accessioned 2015-05-29T09:01:15Z
dc.date.available 2015-05-29T09:01:15Z
dc.date.issued 2008
dc.identifier.citation Holmqvist, T. & Meschke, M. & Pekola, Jukka. 2008. Double oxidation scheme for tunnel junction fabrication. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. Volume 26, Issue 1. 28-31. ISSN 1071-1023 (printed). DOI: 10.1116/1.2817629. en
dc.identifier.issn 1071-1023 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/16397
dc.description.abstract The authors report a method to achieve Al–AlOx–Al tunnel junctions with high specific resistance in a controlled manner using a double oxidation technique. The technique is based on the standard method for oxidation repeated on an additional Al layer. The tunnel junctions were characterized with standard methods, such as comparison of room temperature resistance with liquid helium resistance and the authors found them to be of comparable quality to junctions fabricated with standard single oxidation. Fitting with the Simmons model suggests that both the barrier width and barrier height are consistent with those obtained in a single oxidation step. The junction specific capacitance was determined at low temperature to be 68fF/μm2. These junctions, employed in low temperature measurements and applications, demonstrate expected and stable conductance characteristics. The double oxidation method is straightforward to implement in a basic setup for tunnel junction fabrication. en
dc.format.extent 28-31
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Vacuum Society en
dc.relation.ispartofseries Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures en
dc.relation.ispartofseries Volume 26, Issue 1
dc.rights © 2008 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in Journal of Vacuum Science & Technology B and may be found at http://scitation.aip.org/content/avs/journal/jvstb/26/1/10.1116/1.2817629 en
dc.subject.other Physics en
dc.title Double oxidation scheme for tunnel junction fabrication en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Vacuum Society
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Department of Applied Physics en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.subject.keyword tunnel junctions en
dc.subject.keyword double oxidation schemes en
dc.subject.keyword aluminium en
dc.subject.keyword capacitance en
dc.subject.keyword electrodes en
dc.identifier.urn URN:NBN:fi:aalto-201505293045
dc.type.dcmitype text en
dc.identifier.doi 10.1116/1.2817629
dc.type.version Final published version en


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