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Pumping properties of the hybrid single-electron transistor in dissipative environment

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Lotkhov, S. V.
dc.contributor.author Kemppinen, A.
dc.contributor.author Kafanov, S.
dc.contributor.author Pekola, Jukka P.
dc.contributor.author Zorin, A. B.
dc.date.accessioned 2015-05-19T09:02:24Z
dc.date.available 2015-05-19T09:02:24Z
dc.date.issued 2009
dc.identifier.citation Lotkhov, S. V. & Kemppinen, A. & Kafanov, S. & Pekola, Jukka & Zorin, A. B. 2009. Pumping properties of the hybrid single-electron transistor in dissipative environment. Applied Physics Letters. Volume 95, Issue 11. P. 112507/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3227839. en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/16098
dc.description.abstract Pumping characteristics were studied of a hybrid normal-metal/superconductor single-electron transistor embedded in high-Ohmic environment. Two 3 μm long microstrip resistors of CrOx with a sum resistance R≈80 kΩ were placed adjacent to the transistor. Substantial improvement of pumping and a reduction of the subgap leakage were observed in the low-megahertz range. At higher frequencies (0.1–1 GHz), pumping performance deteriorated compared to reference devices without resistors by the slowdown of tunneling and by electronic heating. en
dc.format.extent 112507/1-3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 95, Issue 11
dc.rights © 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://scitation.aip.org/content/aip/journal/apl/95/11/10.1063/1.3227839 en
dc.subject.other Physics en
dc.title Pumping properties of the hybrid single-electron transistor in dissipative environment en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Department of Applied Physics en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.subject.keyword resistors en
dc.subject.keyword single electron transistors en
dc.subject.keyword superconducting materials en
dc.subject.keyword tunneling en
dc.identifier.urn URN:NBN:fi:aalto-201505192748
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.3227839
dc.type.version Final published version en

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