Detection of mechanical resonance of a single-electron transistor by direct current

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dc.contributor Aalto-yliopisto fi
dc.contributor Aalto University en
dc.contributor.author Pashkin, Yu. A.
dc.contributor.author Li, T. F.
dc.contributor.author Pekola, Jukka P.
dc.contributor.author Astafiev, O.
dc.contributor.author Knyazev, D. A.
dc.contributor.author Hoehne, F.
dc.contributor.author Im, H.
dc.contributor.author Nakamura, Y.
dc.contributor.author Tsai, J. S.
dc.date.accessioned 2015-05-19T09:02:07Z
dc.date.available 2015-05-19T09:02:07Z
dc.date.issued 2010
dc.identifier.citation Pashkin, Yu. A. & Li, T. F. & Pekola, Jukka & Astafiev, O. & Knyazev, D. A. & Hoehne, F. & Im, H. & Nakamura, Y. & Tsai, J. S. 2010. Detection of mechanical resonance of a single-electron transistor by direct current. Applied Physics Letters. Volume 96, Issue 26. P. 263513/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3455880. en
dc.identifier.issn 0003-6951 (printed)
dc.identifier.uri https://aaltodoc.aalto.fi/handle/123456789/16094
dc.description.abstract We have suspended an Al based single-electron transistor (SET) whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations in the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail. en
dc.format.extent 263513/1-3
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.ispartofseries Applied Physics Letters en
dc.relation.ispartofseries Volume 96, Issue 26
dc.rights © 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://scitation.aip.org/content/aip/journal/apl/96/26/10.1063/1.3455880 en
dc.subject.other Physics en
dc.title Detection of mechanical resonance of a single-electron transistor by direct current en
dc.type A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä fi
dc.description.version Peer reviewed en
dc.rights.holder American Institute of Physics
dc.contributor.school Perustieteiden korkeakoulu fi
dc.contributor.school School of Science en
dc.contributor.department Department of Applied Physics en
dc.contributor.department Teknillisen fysiikan laitos fi
dc.subject.keyword mechanical resonance en
dc.subject.keyword single-electron transistor en
dc.subject.keyword direct current en
dc.subject.keyword vibration resonance en
dc.subject.keyword capacitance en
dc.subject.keyword coupled resonators en
dc.subject.keyword electrodes en
dc.subject.keyword electric measurements en
dc.identifier.urn URN:NBN:fi:aalto-201505192745
dc.type.dcmitype text en
dc.identifier.doi 10.1063/1.3455880
dc.type.version Final published version en


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